Second‐Harmonic Generation in Heteroepitaxially Grown, Orientation‐Patterned, Ternary GaAsP Periodic Structures

Orientation‐patterned GaAs0.85P0.15 is grown by hydride vapor phase heteroepitaxy on an orientation‐patterned GaAs template and second‐harmonic generation is demonstrated for this ternary periodic structure using ultrashort pulses with an internal conversion efficiency exceeding 19%. High fidelity, orientation‐patterned (OP) GaAs0.85P0.15 is grown by hydride vapor phase heteroepitaxy on an OP‐GaAs template. Second‐harmonic generation is demonstrated for this ternary periodic structure and compared with OP‐GaAs using ultrashort pulses in two regimes: narrowband and broadband. An intrinsic conversion efficiency exceeding 19% is obtained with OP‐GaAsP in the broadband mode at a fundamental wavelength of ≈5450 nm.