Modélisation à 3D des influences de l'intensité et de l'angle d'inclinaison d'un champ électromagnétique sur le courant et la tension d'une cellule PV au silicium polycristallin

This work investigated, using a 3-D modelling, the influences of the magnitude and the inclination angle of an electromagnetic field (EMF) carried by AM radio waves on the current and the voltage of a polycrystalline silicon PV cell. The electrons transport equations were solved to find the density...

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Veröffentlicht in:International journal of innovation and applied studies 2022-12, Vol.38 (2), p.351-365
Hauptverfasser: Saria, Mamoudou, Saré, Ramatou, Savadogo, Mahamadi, Barandja, Vinci De Dieu Bokoyo, Zoungrana, Martial, Zerbo, Issa
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Sprache:fre
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Zusammenfassung:This work investigated, using a 3-D modelling, the influences of the magnitude and the inclination angle of an electromagnetic field (EMF) carried by AM radio waves on the current and the voltage of a polycrystalline silicon PV cell. The electrons transport equations were solved to find the density of electrons and then to derive the current density and the voltage. Through numerical simulation, the effects of both the magnitude and the inclination angle of the EMF on the density of electrons, the current density and the open circuit voltage were studied. Results of simulation showed that depending on the inclination angle (0 rad; π/2 rad and π rad), the EMF acts differently on the electrical parameters (Jsc and Voc). The analysis also showed that, regardless of the inclination angle of the EMF, there is an open circuit current (Joc) proportional to the magnitude of the EMF (inversely proportional to the distance). This current (Joc) is lost by Joule heating either at the junction (θ = 0 rad) or in the base (θ = π/2 rad and θ = π rad). Finally, the analysis showed that, for θ = π rad (reverse polarization of the PV cell), there is an operating domain (Sf ≤ Sfeq) in which the PV cell is blocked. And another operating domain (Sf > Sfeq) in which the PV cell is a current generator unlike a PN junction diode which remains blocked in reverse bias.
ISSN:2028-9324