High‐Performance Visible to Near‐Infrared Broadband Bi2O2Se Nanoribbon Photodetectors

Owing to its suitable electronic bandgap, excellent air stability, and high carrier mobility at room temperature, low‐dimensional bismuth oxyselenide (Bi2O2Se) has become attractive in the context of visible–near‐infrared (VIS–NIR) detection. However, the high carrier concentration and bolometric effect of Bi2O2Se nanosheets are not conducive to reducing the dark current and improving the response speed, which hinders Bi2O2Se nanosheet‐based photodetectors from achieving an optimal performance. In this study, a Bi2O2Se nanoribbon is controllably synthesized on a fluorophlogopite substrate by means of the chemical vapor deposition approach. Through the use of a Bi2O2Se nanoribbon structure and the application of a Schottky barrier between the Bi2O2Se and Au electrodes, a fast response and low noise photodetector is achieved. More specifically, the response times are 2.1 and 313 µs at 650 and 1550 nm, respectively, and the corresponding optimal detectivities are 3.28 × 1013 and 8.07 × 109 Jones. Furthermore, the device reaches a −3 dB bandwidth of 81 kHz and exhibits a responsivity of 3.2 × 105 A W−1 at 650 nm under a bias of 5 V. This study provides new opportunities for the application of high‐performance VIS–NIR photodetectors. In this work, the Bi2O2Se nanoribbon is controllably synthesized by chemical vapor deposition method. By utilizing Schottky barrier between Bi2O2Se and Au electrodes and appropriate width nanoribbon structure, this Bi2O2Se nanoribbon photodetector shows a high and fast response from visible light (405 nm) to near‐infrared (1550 nm) waveband, which provides a very promising route for visible–near‐infrared detection.