Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022)

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022)

Memory Cells In article number 2106321, Yanqing Wu and co‐workers report the smaller footprint of nonconventional computing‐in‐memory devices based on black phosphorus and rhenium disulfide transistors. By adopting the charge‐trapping mechanism, four‐transistor nonvolatile ternary content‐addressabl...

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Veröffentlicht in:Advanced materials (Weinheim) 2022-12, Vol.34 (48), p.n/a
Hauptverfasser: Xiong, Xiong, Kang, Jiyang, Liu, Shiyuan, Tong, Anyu, Fu, Tianyue, Li, Xuefei, Huang, Ru, Wu, Yanqing
Format: Artikel
Sprache:eng
Schlagworte:
black phosphorus
Materials science
Memory devices
nonvolatile logic
Phosphorus
Rhenium
rhenium disulfide
Schmidt‐like flip‐flop
Semiconductor devices
ternary content‐addressable memory
Transistors
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Zusammenfassung:Memory Cells In article number 2106321, Yanqing Wu and co‐workers report the smaller footprint of nonconventional computing‐in‐memory devices based on black phosphorus and rhenium disulfide transistors. By adopting the charge‐trapping mechanism, four‐transistor nonvolatile ternary content‐addressable memory cells are realized for parallel search operations with reduced complexity and thermal budget.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.202270335