Low-frequency Noise in Vertical InAs/InGaAs Gate-all-around MOSFETs at 15 K for Cryogenic Applications

Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( L G...

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Veröffentlicht in:	IEEE electron device letters 2022-12, Vol.43 (12), p.1-1
Hauptverfasser:	Ram, Mamidala Saketh, Svensson, Johannes, Skog, Sebastian, Johannesson, Sofie, Wernersson, Lars-Erik
Format:	Artikel
Sprache:	eng
Schlagworte:	1/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f -noise Analog circuits Condensed Matter Physics Cryoforming cryogenic Cryogenic engineering Cryogenic temperature Cryogenics Den kondenserade materiens fysik Digital electronics Fluctuations Freezing Fysik gate-all-around MOSFET III-V InAs/InGaAs Indium arsenides Indium gallium arsenide Indium gallium arsenides LF noise Logic gates Low-frequency noise MOSFET MOSFETs Nanowires Natural Sciences Naturvetenskap Noise measurement Physical Sciences Reliability analysis Temperature vertical nanowire
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