Low-frequency Noise in Vertical InAs/InGaAs Gate-all-around MOSFETs at 15 K for Cryogenic Applications

Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( L G ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, α H ~ 5 × 10 -6 and also have a low input-referred gate voltage noise spectral density, S VG = 4.3 μV 2 μm 2 Hz -1 that are important for reliable cryogenic circuit applications.