Low-frequency Noise in Vertical InAs/InGaAs Gate-all-around MOSFETs at 15 K for Cryogenic Applications
Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( L G...
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| Veröffentlicht in: | IEEE electron device letters 2022-12, Vol.43 (12), p.1-1 |
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| creator | Ram, Mamidala Saketh Svensson, Johannes Skog, Sebastian Johannesson, Sofie Wernersson, Lars-Erik |
| description | Low-frequency noise (LFN), or 1/ f -noise, can be used effectively to evaluate device reliability which is a major concern in analog as well as digital circuits. In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( L G ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, α H ~ 5 × 10 -6 and also have a low input-referred gate voltage noise spectral density, S VG = 4.3 μV 2 μm 2 Hz -1 that are important for reliable cryogenic circuit applications. |
| doi_str_mv | 10.1109/LED.2022.3216022 |
| format | Article |
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In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( L G ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, α H ~ 5 × 10 -6 and also have a low input-referred gate voltage noise spectral density, S VG = 4.3 μV 2 μm 2 Hz -1 that are important for reliable cryogenic circuit applications.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2022.3216022</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>1/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f -noise ; Analog circuits ; Condensed Matter Physics ; Cryoforming ; cryogenic ; Cryogenic engineering ; Cryogenic temperature ; Cryogenics ; Den kondenserade materiens fysik ; Digital electronics ; Fluctuations ; Freezing ; Fysik ; gate-all-around MOSFET ; III-V ; InAs/InGaAs ; Indium arsenides ; Indium gallium arsenide ; Indium gallium arsenides ; LF noise ; Logic gates ; Low-frequency noise ; MOSFET ; MOSFETs ; Nanowires ; Natural Sciences ; Naturvetenskap ; Noise measurement ; Physical Sciences ; Reliability analysis ; Temperature ; vertical nanowire</subject><ispartof>IEEE electron device letters, 2022-12, Vol.43 (12), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( L G ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, α H ~ 5 × 10 -6 and also have a low input-referred gate voltage noise spectral density, S VG = 4.3 μV 2 μm 2 Hz -1 that are important for reliable cryogenic circuit applications.</description><subject>1/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f -noise</subject><subject>Analog circuits</subject><subject>Condensed Matter Physics</subject><subject>Cryoforming</subject><subject>cryogenic</subject><subject>Cryogenic engineering</subject><subject>Cryogenic temperature</subject><subject>Cryogenics</subject><subject>Den kondenserade materiens fysik</subject><subject>Digital electronics</subject><subject>Fluctuations</subject><subject>Freezing</subject><subject>Fysik</subject><subject>gate-all-around MOSFET</subject><subject>III-V</subject><subject>InAs/InGaAs</subject><subject>Indium arsenides</subject><subject>Indium gallium arsenide</subject><subject>Indium gallium arsenides</subject><subject>LF noise</subject><subject>Logic gates</subject><subject>Low-frequency noise</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Nanowires</subject><subject>Natural Sciences</subject><subject>Naturvetenskap</subject><subject>Noise measurement</subject><subject>Physical Sciences</subject><subject>Reliability analysis</subject><subject>Temperature</subject><subject>vertical nanowire</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><sourceid>D8T</sourceid><recordid>eNo9kc1v1DAQxSMEEkvhjsTFEudsZ2zHjo-rpSwr0vbAx9VyvGOUKsTBTlTtf4-rrXoYvct7v9HMq6qPCFtEMNfdzZctB863gqMq-qraYNO0NTRKvK42oCXWAkG9rd7l_ACAUmq5qUIXH-uQ6N9Kkz-zuzhkYsPEflNaBu9Gdpx2-fo4Hdwus4NbqHbjWLsU1-nEbu9_fL35mZlbGDbsOwsxsX06xz80DZ7t5nksiGWIU35fvQluzPThWa-qXyW5_1Z394fjftfVXgi-1ITKO9-bE3gyyB2Xrg_B9CR9q1sZOG9adCBOKINEbTQQVwaC11IoMEJcVd2Fmx9pXns7p-GvS2cb3WDHdS7Tl7GZrKJWGYHSesG5lcIHa8BrS31QSKFtRH8quM8X3Jxi-VBe7ENc01QusFxLrkE2LRQXXFw-xZwThZe1CPapHFvKsU_l2OdySuTTJTIQ0YvdGN6gEuI_LzuIUg</recordid><startdate>20221201</startdate><enddate>20221201</enddate><creator>Ram, Mamidala Saketh</creator><creator>Svensson, Johannes</creator><creator>Skog, Sebastian</creator><creator>Johannesson, Sofie</creator><creator>Wernersson, Lars-Erik</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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In this work, we present 1/ f -noise characterization of vertical InAs/InGaAs gate-all-around (GAA) MOSFETs with a 70-nm gate length ( L G ) measured at cryogenic temperatures down to 15 K. The measurements at cryogenic temperatures reveal that the physical mechanism of 1/ f -noise changes from carrier number fluctuations at 300 K to mobility fluctuations at 15 K. We conclude that the channel conduction at 15 K is dominated by the nanowire core instead of the nanowire surface due to the effect of the border and interface traps freezing out. Vertical InAs/InGaAs GAA MOSFETs at 15 K, due to reduced surface scattering, exhibit a low value of Hooge parameter, α H ~ 5 × 10 -6 and also have a low input-referred gate voltage noise spectral density, S VG = 4.3 μV 2 μm 2 Hz -1 that are important for reliable cryogenic circuit applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2022.3216022</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-2874-5106</orcidid><orcidid>https://orcid.org/0000-0002-1039-5849</orcidid><orcidid>https://orcid.org/0000-0002-4673-8225</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | 1/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f -noise Analog circuits Condensed Matter Physics Cryoforming cryogenic Cryogenic engineering Cryogenic temperature Cryogenics Den kondenserade materiens fysik Digital electronics Fluctuations Freezing Fysik gate-all-around MOSFET III-V InAs/InGaAs Indium arsenides Indium gallium arsenide Indium gallium arsenides LF noise Logic gates Low-frequency noise MOSFET MOSFETs Nanowires Natural Sciences Naturvetenskap Noise measurement Physical Sciences Reliability analysis Temperature vertical nanowire |
| title | Low-frequency Noise in Vertical InAs/InGaAs Gate-all-around MOSFETs at 15 K for Cryogenic Applications |
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