Diamond based power electronic devices for aerospace application

Diamond properties should be easily compared to other wide band-gap semiconductor materials as diamond possesses unique properties. Diamond’s thermal conductivity of 22 W/cm K which is greater than many other materials. Effective electronic device operation could be easily obtained by single crystal...

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Hauptverfasser: Shukla, Harshit, Rajvanshi, Tushar, Gupta, Tanish, Kumar, Vipin, Gaurav, Kumar, Kumar, Deepak
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Diamond properties should be easily compared to other wide band-gap semiconductor materials as diamond possesses unique properties. Diamond’s thermal conductivity of 22 W/cm K which is greater than many other materials. Effective electronic device operation could be easily obtained by single crystal diamond films as they promise better efficiency as compared to polycrystalline diamond, as it does not contain many grain boundaries, defects and stacking faults. Polycrystalline diamond films also have high demand in mechanical applications like cutting tools, polishing and grinding of optics etc. Diamond films could be easily grown with Chemical Vapour Deposition techniques (CVD) such as like plasma jet. Boron is present in higher concentration in thin films prepared with MWCVD, especially in (111)-oriented films making it holes carrying semiconductor where boron is the charge acceptor. For achieving superconductivity, it’s important for realizing concentration of carriers effectively high enough for inducing the insulator-to-metal transition. Diamond based devices for reducing the temperature of the devices’ dissipating heat is discussed here. Heat conducting substrate composed of diamond situated in the cooling device should be prepared in the thermal contact with heat dissipating devices which will spread out heat flows over a relatively large area during the operation. (Bi0.25Sb0.75)2Te3 based thermoelectric cooling material must be kept in close with the heat-conducting substrate which will pump heat on the application of electrical power into a second heat-conducting substrate which would be connected to the heat sink.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0117717