AlGaN-Based Deep-Ultraviolet Laser Diodes with Novel Superlattice Electron-Blocking Layers

Based on the specificity of AlGaN-based deep-ultraviolet laser diodes (DUV-LDs), we design a laser with a novel superlattice (SL) electron-blocking layer (EBL) structure using Crosslight’s LASTIP, and its performance is assessed. Considering the existing double-sided graded superlattice (DSGS) EBL s...

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Veröffentlicht in:	Journal of Russian laser research 2022-11, Vol.43 (6), p.678-685
Hauptverfasser:	Wei, Shiqin, Xu, Qiuchen, Li, Yunyi, Xu, Yuan, Wang, Fang, Liou, Juin J., Liu, Yuhuai
Format:	Artikel
Sprache:	eng
Schlagworte:	Energy bands Lasers Leakage Microwaves Optical Devices Optics Photonics Physics Physics and Astronomy Quantum efficiency Radiative recombination RF and Optical Engineering Semiconductor lasers Superlattices Ultraviolet lasers
Online-Zugang:	Volltext
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