AlGaN-Based Deep-Ultraviolet Laser Diodes with Novel Superlattice Electron-Blocking Layers

Based on the specificity of AlGaN-based deep-ultraviolet laser diodes (DUV-LDs), we design a laser with a novel superlattice (SL) electron-blocking layer (EBL) structure using Crosslight’s LASTIP, and its performance is assessed. Considering the existing double-sided graded superlattice (DSGS) EBL structures and comparing their electron and hole concentrations, radiative recombination rate, and energy band diagram in the active region, we find that the electron leakage, power–current curve, voltage–current curve, internal quantum efficiency, and other aspects of the proposed structure can be significantly improved. Therefore, the superlattice EBL structure can more effectively reduce the electron leakage and improve the hole injection efficiency. Compared with the existing DSGS EBL structures, it also demonstrates superior performance for DUV-LDs.