Electrical properties of clathrate formed on the basis of a p-type semiconductor with 2D guest positions filled with ferroelectric and propolis

The paper presents findings on the characteristics of GaSe fourfold-expanded matrix with propolis and sodium nitrite (NaNO 2 ), intercalated in between matrix layers. The nature of changes of impedance frequency behavior, electric loss tangent, and dielectric permittivity under normal conditions, when illumination is applied, and in a constant magnetic field of synthesized intercalate GaSe and bi-intercalate GaSe has been identified. The extraordinary effects have been obtained, indicating that clathrate GaSe has immense values of photo- and magneto-capacitive effects while a current–voltage (I–V) characteristic of clathrate GaSe exhibits the hysteresis behavior typical of memristor structures. The memory effect related to pseudo-capacitive charge accumulation has been found and shown to be due to oxidation–reduction reactions.