Effect of sintering temperature on structural, dielectric and magnetic properties of CoFe1.5Ni0.5O4 prepared by solid-state reaction method
Samples of CoFe 1.5 Ni 0.5 O 4 were synthesized using the solid-state reaction method. As depicted from XRD plots, peak intensities increases as the sintering temperature goes from 1200 to 1300 °C signifying that the crystallinity has improved. Both the samples possess a spinel structure with space...
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Veröffentlicht in: | Applied physics. A, Materials science & processing Materials science & processing, 2022-11, Vol.128 (11), Article 1013 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
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Zusammenfassung: | Samples of CoFe
1.5
Ni
0.5
O
4
were synthesized using the solid-state reaction method. As depicted from XRD plots, peak intensities increases as the sintering temperature goes from 1200 to 1300 °C signifying that the crystallinity has improved. Both the samples possess a spinel structure with space group Fd-3 m. The Rietveld refinement of the samples was done using Full-Prof software to calculate the cationic distribution and other structural parameters. The cation distribution for CoFe
1.5
Ni
0.5
O
4
sintered at 1200 and 1300 °C were found to be (Co
0.25
Fe
0.75
) [Co
0.75
Fe
1.23
Ni
0.03
]O
4
and (Co
0.25
Fe
0.75
) [Co
0.76
Fe
1.21
Ni
0.03
]O
4
respectively. Also the value of lattice constants for the sample sintered at 1300 °C was found to be 8.355 Å which is greater than the lattice constant (8.342 Å) of the sample sintered at 1200 °C. The temperature-dependent dielectric characteristics of the samples were investigated in this work. This study revealed that as the sintering temperature rises, έ and tan δ decrease. Magnetic properties such as coercivity, remanence and saturation magnetizations were reported to decrease as the sintering temperature increased. The respective values of coercivity (H
c
), remanence (M
r
) and saturation magnetization (M
s
) were 87.06 and 71.85 Oe, 9.61 and 7.98 and 63.90 and 56.90 emu/g for the samples sintered at 1200 and 1300 °C. Using low dielectric constant materials, low heat dissipation and parasitic capacitance are obtained, allowing these materials to be utilized in faster switching speeds in devices. |
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ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-022-06159-8 |