Effect of sintering temperature on structural, dielectric and magnetic properties of CoFe1.5Ni0.5O4 prepared by solid-state reaction method

Samples of CoFe 1.5 Ni 0.5 O 4 were synthesized using the solid-state reaction method. As depicted from XRD plots, peak intensities increases as the sintering temperature goes from 1200 to 1300 °C signifying that the crystallinity has improved. Both the samples possess a spinel structure with space...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2022-11, Vol.128 (11), Article 1013
Hauptverfasser: Lone, Gulzar Ahmad, Ikram, Mohd
Format: Artikel
Sprache:eng
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Zusammenfassung:Samples of CoFe 1.5 Ni 0.5 O 4 were synthesized using the solid-state reaction method. As depicted from XRD plots, peak intensities increases as the sintering temperature goes from 1200 to 1300 °C signifying that the crystallinity has improved. Both the samples possess a spinel structure with space group Fd-3 m. The Rietveld refinement of the samples was done using Full-Prof software to calculate the cationic distribution and other structural parameters. The cation distribution for CoFe 1.5 Ni 0.5 O 4 sintered at 1200 and 1300 °C were found to be (Co 0.25 Fe 0.75 ) [Co 0.75 Fe 1.23 Ni 0.03 ]O 4 and (Co 0.25 Fe 0.75 ) [Co 0.76 Fe 1.21 Ni 0.03 ]O 4 respectively. Also the value of lattice constants for the sample sintered at 1300 °C was found to be 8.355 Å which is greater than the lattice constant (8.342 Å) of the sample sintered at 1200 °C. The temperature-dependent dielectric characteristics of the samples were investigated in this work. This study revealed that as the sintering temperature rises, έ and tan δ decrease. Magnetic properties such as coercivity, remanence and saturation magnetizations were reported to decrease as the sintering temperature increased. The respective values of coercivity (H c ), remanence (M r ) and saturation magnetization (M s ) were 87.06 and 71.85 Oe, 9.61 and 7.98 and 63.90 and 56.90 emu/g for the samples sintered at 1200 and 1300 °C. Using low dielectric constant materials, low heat dissipation and parasitic capacitance are obtained, allowing these materials to be utilized in faster switching speeds in devices.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-022-06159-8