Enhanced optoelectronic properties of solution-processed metal-chalcogenide devices via hydrogen-driven post-annealing

Enhanced optoelectronic properties of solution-processed metal-chalcogenide devices via hydrogen-driven post-annealing

Here, we report a general strategy to obtain low-temperature processed high-quality and large-area metal chalcogenide (CdSe) semiconductors from precursor based benign solution process. Using hydrogen-driven post thermal annealing, the deposited thin films enable expeditious formation at relatively...

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Veröffentlicht in:Journal of alloys and compounds 2022-12, Vol.926, p.166780, Article 166780
Hauptverfasser: Nam, Seung-Ji, Kwak, Jee Young, Kwon, Sung Min, Kang, Dong Won, Lee, Jong-Min, Lee, Paul, Kim, Myung-Gil, Kim, Yong-Hoon, Kim, Jaehyun, Park, Sung Kyu
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Borosilicate glass
Cadmium selenides
Chalcogenides
Chemical composition
Conventional thermal annealing
Crystal defects
Glass substrates
High mobility
Hydrogen-assisted annealing
Low temperature
Metal-chalcogenide semiconductor
Molecular structure
Optical properties
Optoelectronic devices
Semiconductor devices
Thin film transistors
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Zusammenfassung:Here, we report a general strategy to obtain low-temperature processed high-quality and large-area metal chalcogenide (CdSe) semiconductors from precursor based benign solution process. Using hydrogen-driven post thermal annealing, the deposited thin films enable expeditious formation at relatively low process temperature ( 107 and subthreshold slope of
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2022.166780