Study of critical optical confinement factor for GeSn-based multiple quantum well lasers

SiGeSn material is of great interest for the development of all-group-IV lasers on a Si substrate. While GeSn-based lasers have been reported worldwide, probing the fundamental limit to lase is highly desirable to reveal the material capability as a gain medium. In this work, three GeSn-based multip...

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Veröffentlicht in:Applied physics letters 2022-10, Vol.121 (17)
Hauptverfasser: Abernathy, Grey, Ojo, Solomon, Grant, Joshua M., Zhou, Yiyin, Du, Wei, Kuchuk, Andrian, Li, Baohua, Yu, Shui-Qing
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Sprache:eng
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Zusammenfassung:SiGeSn material is of great interest for the development of all-group-IV lasers on a Si substrate. While GeSn-based lasers have been reported worldwide, probing the fundamental limit to lase is highly desirable to reveal the material capability as a gain medium. In this work, three GeSn-based multiple quantum well lasers, with four wells, six wells, and ten wells, were characterized. The four-well device cannot achieve lasing due to the thin active region (thickness of 81 nm), resulting in insufficient optical confinement factor. With thicker active region, both six-well (92 nm) and ten-well (136 nm) devices show clear lasing output. The ten-well sample exhibits a higher lasing temperature of 90 K. The finding of this work reveals the fundamental limit of the required optical confinement factor to achieve lasing for a Fabry–Pérot cavity edge emitting laser devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0107081