Self-Powered Short-Wavelength Infrared Photodetectors Composed of MXene/InGaAs Heterostructures

High-performance short-wavelength infrared (SWIR) photodetectors are vital components of many optoelectronic devices with extensive uses in military and civilian domains. In this work, we report on a highly sensitive SWIR photodetector composed geometrically of a two-dimensional Ti3C2 {\text {T}}_{x} MXene/three-dimensional In0.53Ga0.47As heterostructure, which can be assembled via an easy solution processable drop-casting approach. Owing to the notable photovoltaic activity, the heterostructure can operate in self-powered mode at zero bias with {I}_{\text {light}}/I_{\text {dark}} ratio of up to {5}.{8} \times {10}^{{3}} . Significantly, the device exhibits decent responsivity of about 86.4, 56.2, and 45.5 mAW−1 at infrared wavelengths of 970, 1300, and 1550 nm, respectively. Additionally, other critical performance parameters including specific detectivity and response speed are exceeding 1010 Jones and 39/ 35~\mu \text{s} , respectively. It is expected that this work will pave a facile way for developing SWIR photodetectors with good performance and low cost.