Regulating interface Schottky barriers toward a high-performance self-powered imaging photodetector

Two-dimensional (2D) layered organic-inorganic hybrid perovskites have attracted wide attention in high-performance optoelectronic applications due to their good stability and excellent optoelectronic properties. Here, a high-performance self-powered photodetector is realized based on an asymmetrical metal-semiconductor-metal (MSM) device structure (Pt-(PEA) 2 PbI 4 SC-Ag), which introduces a strong built-in electric field by regulating interface Schottky barriers. Benefitting from excellent built-in electrical potential, the photodetector shows attractive photovoltaic properties without any power supply, including high photo-responsivity (114.07 mA W −1 ), fast response time (1.2 μs/582 s) and high detectivity (4.56 × 10 12 Jones). Furthermore, it exhibits high-fidelity imaging capability at zero bias voltage. In addition, the photodetectors show excellent stability by maintaining 99.4% of the initial responsivity in air after 84 days. This work enables a significant advance in perovskite SC photodetectors for developing stable and high-performance devices. A facile method of regulating interface Schottky barriers is used for self-powered photodetectors. Benefitting from the excellent built-in electrical potential, the detector can exhibit high-fidelity imaging capability.