Resistive Switching Behaviors of a Cu/MnO2/FTO Device Under Different Annealing Temperatures

A Cu/MnO 2 /SnO 2 conductive glass doped with a fluorine (referred to as FTO) interlayer sandwich structure resistive switching memory device was prepared by radio-frequency magnetron sputtering and vacuum evaporation. The prepared Cu/MnO 2 /FTO device shows nonvolatile bipolar resistive switching b...

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Veröffentlicht in:	Journal of electronic materials 2022-11, Vol.51 (11), p.6547-6555
Hauptverfasser:	Ai, Ruibo, Zhang, Tao, Guo, Huijie, Luo, Wang, Liu, Xiaojun
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Behavior Characterization and Evaluation of Materials Chemistry and Materials Science Electric fields Electrodes Electronics and Microelectronics Filaments Fluorine Glass substrates Instrumentation Interlayers Magnetron sputtering Manganese dioxide Materials Science Memory devices Metal oxides Optical and Electronic Materials Original Research Article Random access memory Sandwich structures Solid State Physics Switching Temperature Tin dioxide Vacuum evaporation
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