Resistive Switching Behaviors of a Cu/MnO2/FTO Device Under Different Annealing Temperatures

A Cu/MnO 2 /SnO 2 conductive glass doped with a fluorine (referred to as FTO) interlayer sandwich structure resistive switching memory device was prepared by radio-frequency magnetron sputtering and vacuum evaporation. The prepared Cu/MnO 2 /FTO device shows nonvolatile bipolar resistive switching behavior. The effect of annealing temperature on resistance switch characteristics was studied. The experimental results show that the resistive switching behavior of MnO 2 films is affected by annealing temperature; in particular, after annealing at 700 K, the resistive switching performance is more stable. The carrier conduction behavior of the high-resistance state and low-resistance state has been studied. The resistive switching behavior of Cu/MnO 2 /FTO devices is analyzed in the terms of formation and dissipation of filaments under an electric field of an oxygen vacancy conductive path combined with Cu conductive filaments.