Resistive Switching Behaviors of a Cu/MnO2/FTO Device Under Different Annealing Temperatures
A Cu/MnO 2 /SnO 2 conductive glass doped with a fluorine (referred to as FTO) interlayer sandwich structure resistive switching memory device was prepared by radio-frequency magnetron sputtering and vacuum evaporation. The prepared Cu/MnO 2 /FTO device shows nonvolatile bipolar resistive switching b...
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| Veröffentlicht in: | Journal of electronic materials 2022-11, Vol.51 (11), p.6547-6555 |
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| container_title | Journal of electronic materials |
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| creator | Ai, Ruibo Zhang, Tao Guo, Huijie Luo, Wang Liu, Xiaojun |
| description | A Cu/MnO
2
/SnO
2
conductive glass doped with a fluorine (referred to as FTO) interlayer sandwich structure resistive switching memory device was prepared by radio-frequency magnetron sputtering and vacuum evaporation. The prepared Cu/MnO
2
/FTO device shows nonvolatile bipolar resistive switching behavior. The effect of annealing temperature on resistance switch characteristics was studied. The experimental results show that the resistive switching behavior of MnO
2
films is affected by annealing temperature; in particular, after annealing at 700 K, the resistive switching performance is more stable. The carrier conduction behavior of the high-resistance state and low-resistance state has been studied. The resistive switching behavior of Cu/MnO
2
/FTO devices is analyzed in the terms of formation and dissipation of filaments under an electric field of an oxygen vacancy conductive path combined with Cu conductive filaments. |
| doi_str_mv | 10.1007/s11664-022-09896-x |
| format | Article |
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2
/SnO
2
conductive glass doped with a fluorine (referred to as FTO) interlayer sandwich structure resistive switching memory device was prepared by radio-frequency magnetron sputtering and vacuum evaporation. The prepared Cu/MnO
2
/FTO device shows nonvolatile bipolar resistive switching behavior. The effect of annealing temperature on resistance switch characteristics was studied. The experimental results show that the resistive switching behavior of MnO
2
films is affected by annealing temperature; in particular, after annealing at 700 K, the resistive switching performance is more stable. The carrier conduction behavior of the high-resistance state and low-resistance state has been studied. The resistive switching behavior of Cu/MnO
2
/FTO devices is analyzed in the terms of formation and dissipation of filaments under an electric field of an oxygen vacancy conductive path combined with Cu conductive filaments.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-022-09896-x</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Annealing ; Behavior ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electric fields ; Electrodes ; Electronics and Microelectronics ; Filaments ; Fluorine ; Glass substrates ; Instrumentation ; Interlayers ; Magnetron sputtering ; Manganese dioxide ; Materials Science ; Memory devices ; Metal oxides ; Optical and Electronic Materials ; Original Research Article ; Random access memory ; Sandwich structures ; Solid State Physics ; Switching ; Temperature ; Tin dioxide ; Vacuum evaporation</subject><ispartof>Journal of electronic materials, 2022-11, Vol.51 (11), p.6547-6555</ispartof><rights>The Minerals, Metals & Materials Society 2022</rights><rights>The Minerals, Metals & Materials Society 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c270t-7f6253f7aa25da66e29423302d54a7caef280d4b9ae9988a4d3444df406df06f3</cites><orcidid>0000-0002-0414-5819</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-022-09896-x$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-022-09896-x$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Ai, Ruibo</creatorcontrib><creatorcontrib>Zhang, Tao</creatorcontrib><creatorcontrib>Guo, Huijie</creatorcontrib><creatorcontrib>Luo, Wang</creatorcontrib><creatorcontrib>Liu, Xiaojun</creatorcontrib><title>Resistive Switching Behaviors of a Cu/MnO2/FTO Device Under Different Annealing Temperatures</title><title>Journal of electronic materials</title><addtitle>J. Electron. Mater</addtitle><description>A Cu/MnO
2
/SnO
2
conductive glass doped with a fluorine (referred to as FTO) interlayer sandwich structure resistive switching memory device was prepared by radio-frequency magnetron sputtering and vacuum evaporation. The prepared Cu/MnO
2
/FTO device shows nonvolatile bipolar resistive switching behavior. The effect of annealing temperature on resistance switch characteristics was studied. The experimental results show that the resistive switching behavior of MnO
2
films is affected by annealing temperature; in particular, after annealing at 700 K, the resistive switching performance is more stable. The carrier conduction behavior of the high-resistance state and low-resistance state has been studied. The resistive switching behavior of Cu/MnO
2
/FTO devices is analyzed in the terms of formation and dissipation of filaments under an electric field of an oxygen vacancy conductive path combined with Cu conductive filaments.</description><subject>Annealing</subject><subject>Behavior</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electric fields</subject><subject>Electrodes</subject><subject>Electronics and Microelectronics</subject><subject>Filaments</subject><subject>Fluorine</subject><subject>Glass substrates</subject><subject>Instrumentation</subject><subject>Interlayers</subject><subject>Magnetron sputtering</subject><subject>Manganese dioxide</subject><subject>Materials Science</subject><subject>Memory devices</subject><subject>Metal oxides</subject><subject>Optical and Electronic Materials</subject><subject>Original Research Article</subject><subject>Random access memory</subject><subject>Sandwich structures</subject><subject>Solid State Physics</subject><subject>Switching</subject><subject>Temperature</subject><subject>Tin dioxide</subject><subject>Vacuum evaporation</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kM1Kw0AURgdRsFZfwNWA67Hzn2RZq1WhUtAWXAjDmNxpU9pJnUlqfXtTI7hzdTfnfBcOQpeMXjNKk0FkTGtJKOeEZmmmyf4I9ZiSgrBUvx6jHhWaEcWFOkVnMa4oZYqlrIfeniGWsS53gF8-yzpfln6Bb2Bpd2UVIq4ctnjUDJ78lA_Gsym-hV2ZA577AgK-LZ2DAL7GQ-_Brg_uDDZbCLZuAsRzdOLsOsLF7-2j-fhuNnogk-n942g4ITlPaE0Sp7kSLrGWq8JqDTyTXAjKCyVtkltwPKWFfM8sZFmaWlkIKWXhJNWFo9qJPrrqdreh-mgg1mZVNcG3Lw1PWJooyZRuKd5ReahiDODMNpQbG74Mo-ZQ0XQVTVvR_FQ0-1YSnRRb2C8g_E3_Y30Dwml1Rg</recordid><startdate>20221101</startdate><enddate>20221101</enddate><creator>Ai, Ruibo</creator><creator>Zhang, Tao</creator><creator>Guo, Huijie</creator><creator>Luo, Wang</creator><creator>Liu, Xiaojun</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0002-0414-5819</orcidid></search><sort><creationdate>20221101</creationdate><title>Resistive Switching Behaviors of a Cu/MnO2/FTO Device Under Different Annealing Temperatures</title><author>Ai, Ruibo ; Zhang, Tao ; Guo, Huijie ; Luo, Wang ; Liu, Xiaojun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c270t-7f6253f7aa25da66e29423302d54a7caef280d4b9ae9988a4d3444df406df06f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Annealing</topic><topic>Behavior</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electric fields</topic><topic>Electrodes</topic><topic>Electronics and Microelectronics</topic><topic>Filaments</topic><topic>Fluorine</topic><topic>Glass substrates</topic><topic>Instrumentation</topic><topic>Interlayers</topic><topic>Magnetron sputtering</topic><topic>Manganese dioxide</topic><topic>Materials Science</topic><topic>Memory devices</topic><topic>Metal oxides</topic><topic>Optical and Electronic Materials</topic><topic>Original Research Article</topic><topic>Random access memory</topic><topic>Sandwich structures</topic><topic>Solid State Physics</topic><topic>Switching</topic><topic>Temperature</topic><topic>Tin dioxide</topic><topic>Vacuum evaporation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ai, Ruibo</creatorcontrib><creatorcontrib>Zhang, Tao</creatorcontrib><creatorcontrib>Guo, Huijie</creatorcontrib><creatorcontrib>Luo, Wang</creatorcontrib><creatorcontrib>Liu, Xiaojun</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ai, Ruibo</au><au>Zhang, Tao</au><au>Guo, Huijie</au><au>Luo, Wang</au><au>Liu, Xiaojun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resistive Switching Behaviors of a Cu/MnO2/FTO Device Under Different Annealing Temperatures</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2022-11-01</date><risdate>2022</risdate><volume>51</volume><issue>11</issue><spage>6547</spage><epage>6555</epage><pages>6547-6555</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>A Cu/MnO
2
/SnO
2
conductive glass doped with a fluorine (referred to as FTO) interlayer sandwich structure resistive switching memory device was prepared by radio-frequency magnetron sputtering and vacuum evaporation. The prepared Cu/MnO
2
/FTO device shows nonvolatile bipolar resistive switching behavior. The effect of annealing temperature on resistance switch characteristics was studied. The experimental results show that the resistive switching behavior of MnO
2
films is affected by annealing temperature; in particular, after annealing at 700 K, the resistive switching performance is more stable. The carrier conduction behavior of the high-resistance state and low-resistance state has been studied. The resistive switching behavior of Cu/MnO
2
/FTO devices is analyzed in the terms of formation and dissipation of filaments under an electric field of an oxygen vacancy conductive path combined with Cu conductive filaments.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-022-09896-x</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-0414-5819</orcidid></addata></record> |
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| subjects | Annealing Behavior Characterization and Evaluation of Materials Chemistry and Materials Science Electric fields Electrodes Electronics and Microelectronics Filaments Fluorine Glass substrates Instrumentation Interlayers Magnetron sputtering Manganese dioxide Materials Science Memory devices Metal oxides Optical and Electronic Materials Original Research Article Random access memory Sandwich structures Solid State Physics Switching Temperature Tin dioxide Vacuum evaporation |
| title | Resistive Switching Behaviors of a Cu/MnO2/FTO Device Under Different Annealing Temperatures |
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