Formation of Germanium–Vacancy Color Centers in CVD Diamond

We study Ge-doped polycrystalline diamond films synthesized, using microwave plasma chemical vapor deposition (CVD) in CH 4 -H 2 base mixtures. We compare two sources of the dopant – gaseous monogermane (GeH 4 ) and solid Ge plates. We investigate the structure and phase composition of the obtained films, using scanning electron microscopy, photoluminescence (PL), and Raman spectroscopy. We vary the precursor gas composition to maximize the intensity of the Germanium–vacancy (Ge-V) PL signal at 602 nm and discover that, using [C]-rich gas mixtures ([CH 4 ]=20%), we are able to increase the intensity of Ge-V signal by two orders of magnitude in comparison with Ge-doped high-quality microcrystalline films of the same thickness but grown at [CH 4 ]=4%. The attained results may be used for the fabrication of polycrystalline diamond films and plates with high concentrations of Ge-V centers, which may serve as source material for the fabrication of submicrometer-sized luminescent diamond particles for local optical thermometry.