A Model for Multiparametric Analysis of the Parameters of Short-Channel HEMT-Type Transistors

A Model for Multiparametric Analysis of the Parameters of Short-Channel HEMT-Type Transistors

— Based on a set of analytical and one-dimensional numerical models, an approach to the multiparameter optimization of high electron mobility transistors (HEMTs) for the frequency range ~100 GHz is proposed.

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Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2022-06, Vol.56 (6), p.346-351
Hauptverfasser: Nedoshivina, A. D., Makartsev, I. V., Obolensky, S. V.
Format: Artikel
Sprache:eng
Schlagworte:
Dimensional analysis
Electrons
Field-effect transistors
Frequency ranges
High electron mobility transistors
Magnetic Materials
Magnetism
Numerical models
Optimization
Physics
Physics and Astronomy
Quantum wells
Semiconductor devices
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Beschreibung
Zusammenfassung:— Based on a set of analytical and one-dimensional numerical models, an approach to the multiparameter optimization of high electron mobility transistors (HEMTs) for the frequency range ~100 GHz is proposed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782622070065