Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein

Bipolar junction transistors (BJTs), the basic building blocks of integrated circuits, are deployed to control switching applications and logic operations. However, as the thickness of a conventional BJT device approaches a few atoms, its performance decreases substantially. The stacking of atomically thin 2D semiconductor materials is advantageous for manufacturing atomically thin BJT devices owing to the high carrier density of electrons and holes. Here, an atomically thin n–p–n BJT device composed of heavily doped molybdenum ditelluride (n‐MoTe2) and germanium selenide (p‐GeSe) sheets stacked over each other by van der Waals interactions is reported. In a common‐emitter configuration, MoTe2/GeSe/MoTe2 BJT devices exhibit a considerably high current gain (β = Ic /Ib = 29.3) at Vbe = 2.5 V. The MoTe2/GeSe/MoTe2 BJT device is employed to detect streptavidin biomolecules as analytes within