The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface

This study was formed by the β-naphthol orange/p-Si metal–insulator–semiconductor (MIS) structure by obtaining β-naphthol orange on the p-Si surface using the sol–gel and spin-coating techniques. FTIR, EDX, and NMR analyzes of the synthesized dye-sensitized β-naphthol orange were performed. At room temperature, the current–voltage ( I – V ) measurements of the Al/β-naphthol orange/p-Si MIS structure showed that the device has a high rectification ratio of 3 × 10 5 . Series resistance values were calculated as 385 and 38 Ω by Norde and Cheung methods, respectively. It was determined that the interface state density of the device was at the level of 10 13 eV −1 cm −2 and increased exponentially from the middle of the bandgap to the upper edge of the valence band. Frequency-dependent capacitance–voltage ( C – V ) measurements at room temperature showed that the interface state densities in the device are effective in determining device parameters.