High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots

High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots

High-speed photodetectors based on InGaAs/GaAs quantum well–dot nanostructures have been investigated. A bandwidth of 8.2 GHz at a level of ‒3 dB and a wavelength of 905 nm has been demonstrated. It is shown that the speed of internal processes in quantum well–dots make it possible to create photode...

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Veröffentlicht in:Technical physics letters 2022-03, Vol.48 (3), p.161-164
Hauptverfasser: Mintairov, S. A., Blokhin, S. A., Kalyuzhnyy, N. A., Maximov, M. V., Maleev, N. A., Nadtochiy, A. M., Salii, R. A., Kryzhanovskaya, N. V., Zhukov, A. E.
Format: Artikel
Sprache:eng
Schlagworte:
Classical and Continuum Physics
Gallium arsenide
High speed
Indium gallium arsenides
Photometers
Physics
Physics and Astronomy
Quantum wells
Thermalization (energy absorption)
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Zusammenfassung:High-speed photodetectors based on InGaAs/GaAs quantum well–dot nanostructures have been investigated. A bandwidth of 8.2 GHz at a level of ‒3 dB and a wavelength of 905 nm has been demonstrated. It is shown that the speed of internal processes in quantum well–dots make it possible to create photodetectors with a bandwidth of up to 12.5 GHz and the processes of carrier thermalization from the quantum-well dot layers do not limit the speed under reverse biases of more than 5 V.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785022040186