Molecular beam epitaxy and polarized excitonic emission of layered GaTe/GaAs thin films

•The m- and h-GaTe-phases coexist in GaTe/GaAs(001) layers.•3R stacking sequence in GaTe/GaAs(111)B layer was established via SAED.•Origin of the broad 1.45 eV emission band in GaTe/GaAs films is discussed.•Excitonic emission in m-GaTe layers is strongly polarized. This paper reports on molecular be...

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Veröffentlicht in:Journal of crystal growth 2022-08, Vol.592, p.126716, Article 126716
Hauptverfasser: Avdienko, P.S., Sedova, I.V., Galimov, A.I., Rakhlin, M.V., Kirilenko, D.A., Sorokin, S.V.
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Sprache:eng
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Zusammenfassung:•The m- and h-GaTe-phases coexist in GaTe/GaAs(001) layers.•3R stacking sequence in GaTe/GaAs(111)B layer was established via SAED.•Origin of the broad 1.45 eV emission band in GaTe/GaAs films is discussed.•Excitonic emission in m-GaTe layers is strongly polarized. This paper reports on molecular beam epitaxy of GaTe thin films grown on GaAs(001) and GaAs(111)B substrates at temperatures of TS = 450–550 °C under weak Te-rich conditions (Te/Ga≈10–18) as well as studies of their structural and optical properties. The results obtained by transmission electron microscopy and X-ray diffraction techniques have established a correlation between the growth conditions and the GaTe polymorphic transition from hexagonal to monoclinic phase. The critical temperature of the polymorphic transition was found to be ∼540–550 °C. The monoclinic GaTe layers demonstrate an excellent excitonic emission that was confirmed by both micro-photoluminescence and time-resolved photoluminescence techniques. The strong anisotropy of the GaTe excitonic emission has been demonstrated.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2022.126716