Inversion-type p-channel diamond MOSFET issues
This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration ( N P ) of the n-type body on field-effec...
Gespeichert in:
| Veröffentlicht in: | Journal of materials research 2021-12, Vol.36 (23), p.4688-4702 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 4702 |
|---|---|
| container_issue | 23 |
| container_start_page | 4688 |
| container_title | Journal of materials research |
| container_volume | 36 |
| creator | Zhang, Xufang Matsumoto, Tsubasa Yamasaki, Satoshi Nebel, Christoph E. Inokuma, Takao Tokuda, Norio |
| description | This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration (
N
P
) of the n-type body on field-effect mobility (
μ
FE
) and interface state density (
D
it
) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low
μ
FE
and one main reason is high
D
it
. To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low
C–V
method and the conductance method, providing further insights into the trap properties at Al
2
O
3
/diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs.
Graphic abstract |
| doi_str_mv | 10.1557/s43578-021-00317-z |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2708280976</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2708280976</sourcerecordid><originalsourceid>FETCH-LOGICAL-c429t-54decfa77093b96285324825f30f1a629b44e202a1428d563d4357d46cf560303</originalsourceid><addsrcrecordid>eNp9kMtKAzEUhoMoWKsv4GrAderJyXWWUrwUKl2o65DOZHRKmxmTVmif3tQR3Lk6i_Pf-Ai5ZjBhUurbJLjUhgIyCsCZpocTMkIQgkqO6pSMwBhBsWTinFyktAJgErQYkcksfPmY2i7Q7b73RU-rDxeCXxd16zZdqIvnxcvD_WvRprTz6ZKcNW6d_NXvHZO3_Jw-0fnicTa9m9NKYLmlUtS-apzWUPJlqdDkFcKgbDg0zCksl0J4BHRMoKml4vVxfy1U1UgFHPiY3Ay5few-c-_WrrpdDLnSogaDBkqtsgoHVRW7lKJvbB_bjYt7y8AeudiBi81c7A8Xe8gmPphSFod3H_-i_3F9AwTjY1c</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2708280976</pqid></control><display><type>article</type><title>Inversion-type p-channel diamond MOSFET issues</title><source>SpringerLink Journals - AutoHoldings</source><creator>Zhang, Xufang ; Matsumoto, Tsubasa ; Yamasaki, Satoshi ; Nebel, Christoph E. ; Inokuma, Takao ; Tokuda, Norio</creator><creatorcontrib>Zhang, Xufang ; Matsumoto, Tsubasa ; Yamasaki, Satoshi ; Nebel, Christoph E. ; Inokuma, Takao ; Tokuda, Norio</creatorcontrib><description>This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration (
N
P
) of the n-type body on field-effect mobility (
μ
FE
) and interface state density (
D
it
) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low
μ
FE
and one main reason is high
D
it
. To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low
C–V
method and the conductance method, providing further insights into the trap properties at Al
2
O
3
/diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs.
Graphic abstract</description><identifier>ISSN: 0884-2914</identifier><identifier>EISSN: 2044-5326</identifier><identifier>DOI: 10.1557/s43578-021-00317-z</identifier><language>eng</language><publisher>Cham: Springer International Publishing</publisher><subject>Aluminum oxide ; Applied and Technical Physics ; Biomaterials ; Chemistry and Materials Science ; Diamonds ; Electrical properties ; Inorganic Chemistry ; Invited Feature Paper-Review ; Materials Engineering ; Materials research ; Materials Science ; MOSFETs ; Nanotechnology ; State-of-the-art reviews</subject><ispartof>Journal of materials research, 2021-12, Vol.36 (23), p.4688-4702</ispartof><rights>The Author(s) 2021</rights><rights>The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-54decfa77093b96285324825f30f1a629b44e202a1428d563d4357d46cf560303</citedby><cites>FETCH-LOGICAL-c429t-54decfa77093b96285324825f30f1a629b44e202a1428d563d4357d46cf560303</cites><orcidid>0000-0001-9051-6788</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1557/s43578-021-00317-z$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1557/s43578-021-00317-z$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Zhang, Xufang</creatorcontrib><creatorcontrib>Matsumoto, Tsubasa</creatorcontrib><creatorcontrib>Yamasaki, Satoshi</creatorcontrib><creatorcontrib>Nebel, Christoph E.</creatorcontrib><creatorcontrib>Inokuma, Takao</creatorcontrib><creatorcontrib>Tokuda, Norio</creatorcontrib><title>Inversion-type p-channel diamond MOSFET issues</title><title>Journal of materials research</title><addtitle>Journal of Materials Research</addtitle><description>This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration (
N
P
) of the n-type body on field-effect mobility (
μ
FE
) and interface state density (
D
it
) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low
μ
FE
and one main reason is high
D
it
. To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low
C–V
method and the conductance method, providing further insights into the trap properties at Al
2
O
3
/diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs.
Graphic abstract</description><subject>Aluminum oxide</subject><subject>Applied and Technical Physics</subject><subject>Biomaterials</subject><subject>Chemistry and Materials Science</subject><subject>Diamonds</subject><subject>Electrical properties</subject><subject>Inorganic Chemistry</subject><subject>Invited Feature Paper-Review</subject><subject>Materials Engineering</subject><subject>Materials research</subject><subject>Materials Science</subject><subject>MOSFETs</subject><subject>Nanotechnology</subject><subject>State-of-the-art reviews</subject><issn>0884-2914</issn><issn>2044-5326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp9kMtKAzEUhoMoWKsv4GrAderJyXWWUrwUKl2o65DOZHRKmxmTVmif3tQR3Lk6i_Pf-Ai5ZjBhUurbJLjUhgIyCsCZpocTMkIQgkqO6pSMwBhBsWTinFyktAJgErQYkcksfPmY2i7Q7b73RU-rDxeCXxd16zZdqIvnxcvD_WvRprTz6ZKcNW6d_NXvHZO3_Jw-0fnicTa9m9NKYLmlUtS-apzWUPJlqdDkFcKgbDg0zCksl0J4BHRMoKml4vVxfy1U1UgFHPiY3Ay5few-c-_WrrpdDLnSogaDBkqtsgoHVRW7lKJvbB_bjYt7y8AeudiBi81c7A8Xe8gmPphSFod3H_-i_3F9AwTjY1c</recordid><startdate>20211214</startdate><enddate>20211214</enddate><creator>Zhang, Xufang</creator><creator>Matsumoto, Tsubasa</creator><creator>Yamasaki, Satoshi</creator><creator>Nebel, Christoph E.</creator><creator>Inokuma, Takao</creator><creator>Tokuda, Norio</creator><general>Springer International Publishing</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-9051-6788</orcidid></search><sort><creationdate>20211214</creationdate><title>Inversion-type p-channel diamond MOSFET issues</title><author>Zhang, Xufang ; Matsumoto, Tsubasa ; Yamasaki, Satoshi ; Nebel, Christoph E. ; Inokuma, Takao ; Tokuda, Norio</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-54decfa77093b96285324825f30f1a629b44e202a1428d563d4357d46cf560303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Aluminum oxide</topic><topic>Applied and Technical Physics</topic><topic>Biomaterials</topic><topic>Chemistry and Materials Science</topic><topic>Diamonds</topic><topic>Electrical properties</topic><topic>Inorganic Chemistry</topic><topic>Invited Feature Paper-Review</topic><topic>Materials Engineering</topic><topic>Materials research</topic><topic>Materials Science</topic><topic>MOSFETs</topic><topic>Nanotechnology</topic><topic>State-of-the-art reviews</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Xufang</creatorcontrib><creatorcontrib>Matsumoto, Tsubasa</creatorcontrib><creatorcontrib>Yamasaki, Satoshi</creatorcontrib><creatorcontrib>Nebel, Christoph E.</creatorcontrib><creatorcontrib>Inokuma, Takao</creatorcontrib><creatorcontrib>Tokuda, Norio</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhang, Xufang</au><au>Matsumoto, Tsubasa</au><au>Yamasaki, Satoshi</au><au>Nebel, Christoph E.</au><au>Inokuma, Takao</au><au>Tokuda, Norio</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Inversion-type p-channel diamond MOSFET issues</atitle><jtitle>Journal of materials research</jtitle><stitle>Journal of Materials Research</stitle><date>2021-12-14</date><risdate>2021</risdate><volume>36</volume><issue>23</issue><spage>4688</spage><epage>4702</epage><pages>4688-4702</pages><issn>0884-2914</issn><eissn>2044-5326</eissn><abstract>This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration (
N
P
) of the n-type body on field-effect mobility (
μ
FE
) and interface state density (
D
it
) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low
μ
FE
and one main reason is high
D
it
. To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low
C–V
method and the conductance method, providing further insights into the trap properties at Al
2
O
3
/diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs.
Graphic abstract</abstract><cop>Cham</cop><pub>Springer International Publishing</pub><doi>10.1557/s43578-021-00317-z</doi><tpages>15</tpages><orcidid>https://orcid.org/0000-0001-9051-6788</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0884-2914 |
| ispartof | Journal of materials research, 2021-12, Vol.36 (23), p.4688-4702 |
| issn | 0884-2914 2044-5326 |
| language | eng |
| recordid | cdi_proquest_journals_2708280976 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Aluminum oxide Applied and Technical Physics Biomaterials Chemistry and Materials Science Diamonds Electrical properties Inorganic Chemistry Invited Feature Paper-Review Materials Engineering Materials research Materials Science MOSFETs Nanotechnology State-of-the-art reviews |
| title | Inversion-type p-channel diamond MOSFET issues |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T16%3A52%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Inversion-type%20p-channel%20diamond%20MOSFET%20issues&rft.jtitle=Journal%20of%20materials%20research&rft.au=Zhang,%20Xufang&rft.date=2021-12-14&rft.volume=36&rft.issue=23&rft.spage=4688&rft.epage=4702&rft.pages=4688-4702&rft.issn=0884-2914&rft.eissn=2044-5326&rft_id=info:doi/10.1557/s43578-021-00317-z&rft_dat=%3Cproquest_cross%3E2708280976%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2708280976&rft_id=info:pmid/&rfr_iscdi=true |