Inversion-type p-channel diamond MOSFET issues

This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We successfully developed the world’s first inversion-channel homoepitaxial and heteroepitaxial diamond MOSFETs. We investigated the dependence of phosphorus concentration ( N P ) of the n-type body on field-effect mobility ( μ FE ) and interface state density ( D it ) for the inversion channel homoepitaxial diamond MOSFETs. With regard to the electrical properties of both the homoepitaxial and heteroepitaxial diamond MOSFETs, they suffer from low μ FE and one main reason is high D it . To improve the interface quality, we proposed a novel technique to form OH-termination by using H-diamond followed by wet annealing, instead of the previous OH-termination formed on O-diamond. We made precise interface characterization for diamond MOS capacitors by using the high-low C–V method and the conductance method, providing further insights into the trap properties at Al 2 O 3 /diamond interface, which would be beneficial for performance enhancement of the inversion-type p-channel diamond MOSFETs. Graphic abstract