Lamination of Flexible Organic Transistors on Fabric for E-Textile

Flexible organic field-effect transistors (OFETs) based on solution-processed TIPS-Pentacene as semiconductor and high- {k} P(VDF-TrFE) gate dielectric are successfully demonstrated on fabric for future electronic textile (e-textile) applications. These devices exhibited very high electrical performance with maximum ( \mu _{{\mathrm {max}}} ) and average ( \mu _{{\mathrm {avg}}} ) field-effect mobility values of ~1.2 and ~0.5(±0.3) {\mathrm {cm}}^{2}\cdot {\mathrm {V}}^{-1}\cdot {\mathrm {s}}^{-1} , respectively, in the saturation regime and {I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}} of ~10 3 for a low operating voltage of −5 V, along with excellent electromechanical stability. Furthermore, these devices showed excellent environmental stability with almost unchanged electrical characteristics for 26 weeks. Moreover, devices showed high cyclic stability with stable ON/ OFF switching characterized up to 500 cycles.