Mechanical Modulation of 2D Electronic Devices at Atto‐Joule Energy via Flexotronic Effect

In addition to electrical, optical, and magnetic fields, mechanical forces have demonstrated a strong ability to modulate semiconductor devices. With the rapid development of piezotronics and flexotronics, force regulation has been widely used in field‐effect transistors (FETs), human–machine interfaces, light‐emitting diodes (LEDs), solar cells, etc. Here, a large mechanical modulation of electronic properties by nano‐Newton force in semiconductor materials with a large Young's modulus‐based force FET is reported. More importantly, this FET has ultralow switching energy dissipation (7 aJ per decuple current gain) and nearly zero leakage power; these values are even better than those of electronic FETs. This finding paves the way for practical applications of nanoforce modulation devices at high power efficiency. An ultralow power consumption force field‐effect transistor with large modulation by the FE in 2D MoS2 is demonstrated. A new principle for mechanical modulation can realize ultrahigh electromechanical resolution (nano‐Newton) and sensitivity (GF >4801), and this process only consumes atto‐Joule energy and the leakage power approaches zero, indicating the direction for the next generation of low‐power electronics.