Influence of gamma irradiation on structural, optical, and electrical characterization of Bi2S3 thin films

The induced effects of the gamma rays on properties of bismuth sulfide (Bi 2 S 3 ) thin films synthesized using successive ionic layer adsorption and reaction (SILAR) have been investigated in details in this work. The Bi 2 S 3 thin films are prepared on glass substrate and then exposed with low gamma radiation dose in the range of 0–1000 Gy. X-ray diffraction (XRD) confirmed the orthorhombic structural phase. Also, it was noticed in the XRD result that the crystallite size decreased from 115.29 to 73.63 nm with increasing gamma rays doses. For surface properties as well as stoichiometry of the prepared and irradiated thin film have been studied by field emission scanning electron microscope (FESEM). The optical transmission of irradiated samples increased and the energy band gap (E) decreased from 2.78 to 2.52 eV with gamma dose. Photoluminescence (PL) spectra revealed the improvement in the emission characteristics of Bi 2 S 3 thin films with irradiation in the range of 250–1000 Gy. Impedance spectroscopy investigation exhibited that the resistance due to grain boundaries meaningfully contributed to the electrical characteristics of the Bi 2 S 3 thin films. The achieved results suggested that Bi 2 S 3 thin films are a good tool for further study of dosimetry and radiation sensing application.