Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures
An analysis of carrier transport is performed on multilayer HgCdTe heterostructures with complex composition and doping profiles by combining models for carrier scattering with multilayer modeling of the transport properties obtained through resistivity and Hall measurements of the entire multilayer...
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| Veröffentlicht in: | Journal of electronic materials 2022-09, Vol.51 (9), p.4714-4720 |
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| container_title | Journal of electronic materials |
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| creator | Shojaei, B. Wang, S. Gruenewald, J. Ellsworth, J. Edwall, D. Daraselia, M. Dreiske, M. Edirisooriya, M. Yulius, A. Carmody, M. |
| description | An analysis of carrier transport is performed on multilayer HgCdTe heterostructures with complex composition and doping profiles by combining models for carrier scattering with multilayer modeling of the transport properties obtained through resistivity and Hall measurements of the entire multilayer stack. The analysis is applied to the study of carrier scattering in low-doped HgCdTe multilayers grown on (211) CdZnTe substrates by molecular beam epitaxy. The predictive capability of the modeling and its usefulness as a form of rapid and accurate feedback from simple Hall effect measurements are highlighted. The ability to routinely produce HgCdTe films with free carrier concentration (
n
d
–
n
a
) in the range of 10
13
–10
14
cm
−3
while preserving carrier mobility with respect to higher concentrations is evident from the dependence of mobility on carrier density for fixed HgCdTe compositions. |
| doi_str_mv | 10.1007/s11664-022-09802-5 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2699831264</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2699831264</sourcerecordid><originalsourceid>FETCH-LOGICAL-c249t-e211e7af7d65fd4757756d21e571b7becd90be284175ba1ad1fb0be6e1e400823</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWD_-gKeA52gmm4_doxRrhRYPreAtZHdn65Z2tybZQ_-9qSt48zQwvM87w0PIHfAH4Nw8BgCtJeNCMF7kXDB1RiagZMYg1x_nZMIzDUyJTF2SqxC2nIOCHCZktopD3WKgfUNXlYsRfdtt6BKrT9e1YR9o29HlsIvtzh3R0_lmWq-RzjEF-xD9UMXBY7ghF43bBbz9ndfkffa8ns7Z4u3ldfq0YJWQRWQoANC4xtRaNbU0yhilawGoDJSmxKoueIkil2BU6cDV0JRpoRFQcp6L7Jrcj70H338NGKLd9oPv0kkrdFHkGQgtU0qMqSr9GDw29uDbvfNHC9yefNnRl02-7I8vqxKUjVA4nBSg_6v-h_oGeDRt6w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2699831264</pqid></control><display><type>article</type><title>Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures</title><source>SpringerLink Journals - AutoHoldings</source><creator>Shojaei, B. ; Wang, S. ; Gruenewald, J. ; Ellsworth, J. ; Edwall, D. ; Daraselia, M. ; Dreiske, M. ; Edirisooriya, M. ; Yulius, A. ; Carmody, M.</creator><creatorcontrib>Shojaei, B. ; Wang, S. ; Gruenewald, J. ; Ellsworth, J. ; Edwall, D. ; Daraselia, M. ; Dreiske, M. ; Edirisooriya, M. ; Yulius, A. ; Carmody, M.</creatorcontrib><description>An analysis of carrier transport is performed on multilayer HgCdTe heterostructures with complex composition and doping profiles by combining models for carrier scattering with multilayer modeling of the transport properties obtained through resistivity and Hall measurements of the entire multilayer stack. The analysis is applied to the study of carrier scattering in low-doped HgCdTe multilayers grown on (211) CdZnTe substrates by molecular beam epitaxy. The predictive capability of the modeling and its usefulness as a form of rapid and accurate feedback from simple Hall effect measurements are highlighted. The ability to routinely produce HgCdTe films with free carrier concentration (
n
d
–
n
a
) in the range of 10
13
–10
14
cm
−3
while preserving carrier mobility with respect to higher concentrations is evident from the dependence of mobility on carrier density for fixed HgCdTe compositions.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-022-09802-5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>2021 U.S. Workshop on Physics and Chemistry of II-VI Materials ; Carrier density ; Carrier mobility ; Carrier transport ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Composition ; Electronics and Microelectronics ; Epitaxial growth ; Hall effect ; Heterostructures ; Instrumentation ; Materials Science ; Mercury cadmium tellurides ; Modelling ; Molecular beam epitaxy ; Multilayers ; Optical and Electronic Materials ; Scattering ; Sensors ; Solid State Physics ; Substrates ; Transport properties ; U.S. Workshop on the Physics and Chemistry of II-VI Materials 2021</subject><ispartof>Journal of electronic materials, 2022-09, Vol.51 (9), p.4714-4720</ispartof><rights>The Minerals, Metals & Materials Society 2022</rights><rights>The Minerals, Metals & Materials Society 2022.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c249t-e211e7af7d65fd4757756d21e571b7becd90be284175ba1ad1fb0be6e1e400823</citedby><cites>FETCH-LOGICAL-c249t-e211e7af7d65fd4757756d21e571b7becd90be284175ba1ad1fb0be6e1e400823</cites><orcidid>0000-0002-2782-6924</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-022-09802-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-022-09802-5$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Shojaei, B.</creatorcontrib><creatorcontrib>Wang, S.</creatorcontrib><creatorcontrib>Gruenewald, J.</creatorcontrib><creatorcontrib>Ellsworth, J.</creatorcontrib><creatorcontrib>Edwall, D.</creatorcontrib><creatorcontrib>Daraselia, M.</creatorcontrib><creatorcontrib>Dreiske, M.</creatorcontrib><creatorcontrib>Edirisooriya, M.</creatorcontrib><creatorcontrib>Yulius, A.</creatorcontrib><creatorcontrib>Carmody, M.</creatorcontrib><title>Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures</title><title>Journal of electronic materials</title><addtitle>J. Electron. Mater</addtitle><description>An analysis of carrier transport is performed on multilayer HgCdTe heterostructures with complex composition and doping profiles by combining models for carrier scattering with multilayer modeling of the transport properties obtained through resistivity and Hall measurements of the entire multilayer stack. The analysis is applied to the study of carrier scattering in low-doped HgCdTe multilayers grown on (211) CdZnTe substrates by molecular beam epitaxy. The predictive capability of the modeling and its usefulness as a form of rapid and accurate feedback from simple Hall effect measurements are highlighted. The ability to routinely produce HgCdTe films with free carrier concentration (
n
d
–
n
a
) in the range of 10
13
–10
14
cm
−3
while preserving carrier mobility with respect to higher concentrations is evident from the dependence of mobility on carrier density for fixed HgCdTe compositions.</description><subject>2021 U.S. Workshop on Physics and Chemistry of II-VI Materials</subject><subject>Carrier density</subject><subject>Carrier mobility</subject><subject>Carrier transport</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Composition</subject><subject>Electronics and Microelectronics</subject><subject>Epitaxial growth</subject><subject>Hall effect</subject><subject>Heterostructures</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Mercury cadmium tellurides</subject><subject>Modelling</subject><subject>Molecular beam epitaxy</subject><subject>Multilayers</subject><subject>Optical and Electronic Materials</subject><subject>Scattering</subject><subject>Sensors</subject><subject>Solid State Physics</subject><subject>Substrates</subject><subject>Transport properties</subject><subject>U.S. Workshop on the Physics and Chemistry of II-VI Materials 2021</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9kE1LAzEQhoMoWD_-gKeA52gmm4_doxRrhRYPreAtZHdn65Z2tybZQ_-9qSt48zQwvM87w0PIHfAH4Nw8BgCtJeNCMF7kXDB1RiagZMYg1x_nZMIzDUyJTF2SqxC2nIOCHCZktopD3WKgfUNXlYsRfdtt6BKrT9e1YR9o29HlsIvtzh3R0_lmWq-RzjEF-xD9UMXBY7ghF43bBbz9ndfkffa8ns7Z4u3ldfq0YJWQRWQoANC4xtRaNbU0yhilawGoDJSmxKoueIkil2BU6cDV0JRpoRFQcp6L7Jrcj70H338NGKLd9oPv0kkrdFHkGQgtU0qMqSr9GDw29uDbvfNHC9yefNnRl02-7I8vqxKUjVA4nBSg_6v-h_oGeDRt6w</recordid><startdate>20220901</startdate><enddate>20220901</enddate><creator>Shojaei, B.</creator><creator>Wang, S.</creator><creator>Gruenewald, J.</creator><creator>Ellsworth, J.</creator><creator>Edwall, D.</creator><creator>Daraselia, M.</creator><creator>Dreiske, M.</creator><creator>Edirisooriya, M.</creator><creator>Yulius, A.</creator><creator>Carmody, M.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0002-2782-6924</orcidid></search><sort><creationdate>20220901</creationdate><title>Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures</title><author>Shojaei, B. ; Wang, S. ; Gruenewald, J. ; Ellsworth, J. ; Edwall, D. ; Daraselia, M. ; Dreiske, M. ; Edirisooriya, M. ; Yulius, A. ; Carmody, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c249t-e211e7af7d65fd4757756d21e571b7becd90be284175ba1ad1fb0be6e1e400823</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>2021 U.S. Workshop on Physics and Chemistry of II-VI Materials</topic><topic>Carrier density</topic><topic>Carrier mobility</topic><topic>Carrier transport</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Composition</topic><topic>Electronics and Microelectronics</topic><topic>Epitaxial growth</topic><topic>Hall effect</topic><topic>Heterostructures</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Mercury cadmium tellurides</topic><topic>Modelling</topic><topic>Molecular beam epitaxy</topic><topic>Multilayers</topic><topic>Optical and Electronic Materials</topic><topic>Scattering</topic><topic>Sensors</topic><topic>Solid State Physics</topic><topic>Substrates</topic><topic>Transport properties</topic><topic>U.S. Workshop on the Physics and Chemistry of II-VI Materials 2021</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shojaei, B.</creatorcontrib><creatorcontrib>Wang, S.</creatorcontrib><creatorcontrib>Gruenewald, J.</creatorcontrib><creatorcontrib>Ellsworth, J.</creatorcontrib><creatorcontrib>Edwall, D.</creatorcontrib><creatorcontrib>Daraselia, M.</creatorcontrib><creatorcontrib>Dreiske, M.</creatorcontrib><creatorcontrib>Edirisooriya, M.</creatorcontrib><creatorcontrib>Yulius, A.</creatorcontrib><creatorcontrib>Carmody, M.</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shojaei, B.</au><au>Wang, S.</au><au>Gruenewald, J.</au><au>Ellsworth, J.</au><au>Edwall, D.</au><au>Daraselia, M.</au><au>Dreiske, M.</au><au>Edirisooriya, M.</au><au>Yulius, A.</au><au>Carmody, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures</atitle><jtitle>Journal of electronic materials</jtitle><stitle>J. Electron. Mater</stitle><date>2022-09-01</date><risdate>2022</risdate><volume>51</volume><issue>9</issue><spage>4714</spage><epage>4720</epage><pages>4714-4720</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>An analysis of carrier transport is performed on multilayer HgCdTe heterostructures with complex composition and doping profiles by combining models for carrier scattering with multilayer modeling of the transport properties obtained through resistivity and Hall measurements of the entire multilayer stack. The analysis is applied to the study of carrier scattering in low-doped HgCdTe multilayers grown on (211) CdZnTe substrates by molecular beam epitaxy. The predictive capability of the modeling and its usefulness as a form of rapid and accurate feedback from simple Hall effect measurements are highlighted. The ability to routinely produce HgCdTe films with free carrier concentration (
n
d
–
n
a
) in the range of 10
13
–10
14
cm
−3
while preserving carrier mobility with respect to higher concentrations is evident from the dependence of mobility on carrier density for fixed HgCdTe compositions.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-022-09802-5</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-2782-6924</orcidid></addata></record> |
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| subjects | 2021 U.S. Workshop on Physics and Chemistry of II-VI Materials Carrier density Carrier mobility Carrier transport Characterization and Evaluation of Materials Chemistry and Materials Science Composition Electronics and Microelectronics Epitaxial growth Hall effect Heterostructures Instrumentation Materials Science Mercury cadmium tellurides Modelling Molecular beam epitaxy Multilayers Optical and Electronic Materials Scattering Sensors Solid State Physics Substrates Transport properties U.S. Workshop on the Physics and Chemistry of II-VI Materials 2021 |
| title | Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T00%3A40%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Studies%20of%20Scattering%20Mechanisms%20in%20Multilayer%20HgCdTe%20Heterostructures&rft.jtitle=Journal%20of%20electronic%20materials&rft.au=Shojaei,%20B.&rft.date=2022-09-01&rft.volume=51&rft.issue=9&rft.spage=4714&rft.epage=4720&rft.pages=4714-4720&rft.issn=0361-5235&rft.eissn=1543-186X&rft_id=info:doi/10.1007/s11664-022-09802-5&rft_dat=%3Cproquest_cross%3E2699831264%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2699831264&rft_id=info:pmid/&rfr_iscdi=true |