Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures

An analysis of carrier transport is performed on multilayer HgCdTe heterostructures with complex composition and doping profiles by combining models for carrier scattering with multilayer modeling of the transport properties obtained through resistivity and Hall measurements of the entire multilayer stack. The analysis is applied to the study of carrier scattering in low-doped HgCdTe multilayers grown on (211) CdZnTe substrates by molecular beam epitaxy. The predictive capability of the modeling and its usefulness as a form of rapid and accurate feedback from simple Hall effect measurements are highlighted. The ability to routinely produce HgCdTe films with free carrier concentration ( n d – n a ) in the range of 10 13 –10 14 cm −3 while preserving carrier mobility with respect to higher concentrations is evident from the dependence of mobility on carrier density for fixed HgCdTe compositions.