Preparation and performance of an investigated temperature response device based on Sn–3.5 Ag film

With the integration and power of electronic devices increasing, the working temperature of many electronic products continues to increase, so the circuit system usually needs a protection device to prevent circuit overheating. A novel integrated temperature response device based on Sn–3.5 Ag film is proposed to protect the circuit. Using Sn–3.5 Ag alloy as a target, Sn–3.5 Ag films were prepared at 108 W sputtering power, 0.1–2 Pa sputtering pressure and 3 h sputtering time. The surface and cross section morphology, composition and melting point of Sn–3.5 Ag film was analyzed to revel the working principle of Sn–3.5 Ag film, using field emission scanning electron microscope, energy dispersive spectrometer, X-ray diffraction, and differential scanning calorimetry. The temperature response devices based on Sn–3.5 Ag film and alloy were respectively prepared and they were tested for temperature-current response, using a self-designed circuit system. The results illustrated that temperature response device based on Sn–3.5 Ag alloy film can effectively protect the circuit. The response temperature of the film depends on the particle diameter of the film. Once the sputtering pressure exceeds 1 Pa, the particle size of the film can reach the nanoscale, resulting in a significantly reduced response temperature.