Fast Recovery Diodes for High-Current High- Voltage Insulated Gate Bipolar Transistors

Silicon Fast Recovery Diodes of 4.5 kV class were produced with diameter of active area between 100 and 150 mm. Wide Safe Operation Area is experimentally demonstrated with IGBT operated at di/dt above 4 kA/ \mu \text{s} for which diode recovery losses and peak power show decreasing trend above the...

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Veröffentlicht in:	IEEE electron device letters 2022-08, Vol.43 (8), p.1311-1314
1. Verfasser:	Vobecky, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit design Circuits Current measurement Fast recovery diode high voltage IGBT Insulated gate bipolar transistors Integrated circuit modeling Logic gates Recovery Robustness safe operation area Semiconductor devices Short circuit currents silicon Switches TCAD Voltage measurement
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