Fast Recovery Diodes for High-Current High- Voltage Insulated Gate Bipolar Transistors

Fast Recovery Diodes for High-Current High- Voltage Insulated Gate Bipolar Transistors

Silicon Fast Recovery Diodes of 4.5 kV class were produced with diameter of active area between 100 and 150 mm. Wide Safe Operation Area is experimentally demonstrated with IGBT operated at di/dt above 4 kA/ \mu \text{s} for which diode recovery losses and peak power show decreasing trend above the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2022-08, Vol.43 (8), p.1311-1314
1. Verfasser: Vobecky, Jan
Format: Artikel
Sprache:eng
Schlagworte:
Circuit design
Circuits
Current measurement
Fast recovery diode
high voltage
IGBT
Insulated gate bipolar transistors
Integrated circuit modeling
Logic gates
Recovery
Robustness
safe operation area
Semiconductor devices
Short circuit currents
silicon
Switches
TCAD
Voltage measurement
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Silicon Fast Recovery Diodes of 4.5 kV class were produced with diameter of active area between 100 and 150 mm. Wide Safe Operation Area is experimentally demonstrated with IGBT operated at di/dt above 4 kA/ \mu \text{s} for which diode recovery losses and peak power show decreasing trend above the diode average rating current of 5 kA, which is half of Insulated Gate Bipolar Transistor (IGBT) short circuit current. The role of IGBT switch and diode design on the robustness enhanced by increased diode area, is explained. The experimental results are confirmed by device simulation (TCAD).
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3187159