Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

A novel vertical C-shaped-channel nanosheet field-effect-transistor (VCNFET) featured with precise control of channel-thickness and gate-length, and a unique integration flow of Dual Side Process (DSP) are proposed in this work. The VCNFETs were fabricated by high quality Si/SiGe epitaxy, atomic lay...

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Veröffentlicht in:	IEEE electron device letters 2022-08, Vol.43 (8), p.1183-1186
Hauptverfasser:	Xiao, Z. R., Wang, Q., Zhu, H. L., Chen, Z., Zhang, Y. K., Li, J. J., Zhou, N., Gao, J. F., Ai, X. Z., Lu, S. S., Huang, W. X., Xiong, W. J., Kong, Z. Z., Xiang, J. J., Zhang, Y., Zhao, J., Liu, J. B., Lu, Y. H., Bai, G. B., He, X. B., Du, A. Y., Wu, Z. H., Yang, T., Li, J. F., Luo, J., Wang, W. W., Ye, T. C.
Format:	Artikel
Sprache:	eng
Schlagworte:	3D monolithic integration Epitaxial growth Etching Field effect transistors Ion/Ioff ratio Logic gates nanosheet Nanosheets Optimization Process control Self alignment Semiconductor devices Silicon Silicon germanium Thickness VCNFET Vertical C-shaped-channel nanosheet FET
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