Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

Vertical C-Shaped-Channel Nanosheet FETs Featured With Precise Control of Both Channel-Thickness and Gate-Length

A novel vertical C-shaped-channel nanosheet field-effect-transistor (VCNFET) featured with precise control of channel-thickness and gate-length, and a unique integration flow of Dual Side Process (DSP) are proposed in this work. The VCNFETs were fabricated by high quality Si/SiGe epitaxy, atomic lay...

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Veröffentlicht in:IEEE electron device letters 2022-08, Vol.43 (8), p.1183-1186
Hauptverfasser: Xiao, Z. R., Wang, Q., Zhu, H. L., Chen, Z., Zhang, Y. K., Li, J. J., Zhou, N., Gao, J. F., Ai, X. Z., Lu, S. S., Huang, W. X., Xiong, W. J., Kong, Z. Z., Xiang, J. J., Zhang, Y., Zhao, J., Liu, J. B., Lu, Y. H., Bai, G. B., He, X. B., Du, A. Y., Wu, Z. H., Yang, T., Li, J. F., Luo, J., Wang, W. W., Ye, T. C.
Format: Artikel
Sprache:eng
Schlagworte:
3D monolithic integration
Epitaxial growth
Etching
Field effect transistors
Ion/Ioff ratio
Logic gates
nanosheet
Nanosheets
Optimization
Process control
Self alignment
Semiconductor devices
Silicon
Silicon germanium
Thickness
VCNFET
Vertical C-shaped-channel nanosheet FET
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Zusammenfassung:A novel vertical C-shaped-channel nanosheet field-effect-transistor (VCNFET) featured with precise control of channel-thickness and gate-length, and a unique integration flow of Dual Side Process (DSP) are proposed in this work. The VCNFETs were fabricated by high quality Si/SiGe epitaxy, atomic layer etching with nanometer-scale process control and self-aligned high-k metal gate (HKMG). The integration flow is compatible with mainstream CMOS technology. Thanks to the precise control of channel thickness and doping profiles, perfect SS of 61 mV/dec, small DIBL of 8 mV/V, and remarkably large \text{I}_{\text {on}}/\text {I}_{\text {off}} ratio of {6.28}\times {10}^{{9}} were achieved. The device performance and it's optimization were also investigated with the reduction of the external resistance and numerical simulations.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2022.3187006