Gate modulation of the spin current in graphene/WSe2 van der Waals heterostructure at room temperature

Two-dimensional transition metal dichalcogenide semiconductors owning a large intrinsic spin-orbit coupling (SOC) are considered the best candidates to generate, detect and manipulate the spin currents. The SOC defines the interconversion of spin and charge currents via Rashba Edelstein effect (spin Hall effect) and its reciprocal as inverse Rashba Edelstein effect (inverse spin Hall effect). However, the spin signal originated in low dimensional materials because of Rashba Edelstein effect or spin Hall effect yet needed to be addressed with distinguishable measurement technique. Here, we demonstrate experimentally the room temperature interconversion of spin and charge currents in Graphene/WSe2 van der Waals heterostructure which is induced by proximity effect. Remarkably, the spin currents induced by Rashba Edelstein effect and spin Hall effect are discriminated and extracted individually via external magnetic field, respectively. The magnitude of spin transport and their corresponding spin efficiencies (αREE=1.47±0.03%) and (θSHE==4.5±0.07%) are modulated via applied electric field and temperature. Such electric, and magnetic field tunability of the spin transport through the non-magnetic materials may provide a new approach to fabricate the fast and low-power spintronic devices for quantum scale applications. •Experimental demonstration of interconversion of spin and charge currents in Graphene/WSe2 van der Waals heterostructure, induced by proximity of WSe2, at room temperature.•Remarkably, the spin currents induced by Rashba Edelstein effect and spin Hall effect are discriminated and their corresponding spin efficiencies are extracted individually via external magnetic field, respectively.