Facet-dependent electrical conductivity properties of a 4H-SiC wafer

Intrinsic {0001} 4H-SiC wafer cut to expose {101&cmb.macr;0} and {12&cmb.macr;10} side faces allows for conductivity measurements on different crystal surfaces. The wafer has a band gap of 3.20 eV. Its {0001} face gives a strong emission band at 384 nm, but the {101&cmb.macr;0} face is b...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2022-07, Vol.1 (28), p.1424-1428
Hauptverfasser:	Kumar, Gautam, Chen, Jing-Wei, Ma, Hsueh-Heng, Huang, Xing-Fu, Huang, Michael H
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystal surfaces Electrical resistivity Photoconductivity Silicon carbide Transistors
Online-Zugang:	Volltext
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