Comparison of STM and AFM Measurements of Mo Thin Films with the Kardar–Parisi–Zhang Model
Scanning tunneling microscopy and atomic force microscopy were used to study the topography of epitaxial Mo films of small thicknesses grown on the R -plane of sapphire. The domain of parameters of the Kardar–Parisi–Zhang model for the evolution of film surface profile in which it corresponds to the...
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| Veröffentlicht in: | Technical physics 2022-02, Vol.67 (2), p.61-68 |
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| container_title | Technical physics |
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| creator | Fomin, L. A. Malikov, I. V. Berezin, V. A. Rassadin, A. E. Loginov, A. B. Loginov, B. A. |
| description | Scanning tunneling microscopy and atomic force microscopy were used to study the topography of epitaxial Mo films of small thicknesses grown on the
R
-plane of sapphire. The domain of parameters of the Kardar–Parisi–Zhang model for the evolution of film surface profile in which it corresponds to the experimental results is found. |
| doi_str_mv | 10.1134/S1063784222010054 |
| format | Article |
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R
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R
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| ispartof | Technical physics, 2022-02, Vol.67 (2), p.61-68 |
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| language | eng |
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| subjects | Atomic force microscopy Classical and Continuum Physics Dielectric films Epitaxial growth Epitaxy Physics Physics and Astronomy Sapphire Scanning tunneling microscopy Thickness Thin films |
| title | Comparison of STM and AFM Measurements of Mo Thin Films with the Kardar–Parisi–Zhang Model |
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