Comparison of STM and AFM Measurements of Mo Thin Films with the Kardar–Parisi–Zhang Model

Comparison of STM and AFM Measurements of Mo Thin Films with the Kardar–Parisi–Zhang Model

Scanning tunneling microscopy and atomic force microscopy were used to study the topography of epitaxial Mo films of small thicknesses grown on the R -plane of sapphire. The domain of parameters of the Kardar–Parisi–Zhang model for the evolution of film surface profile in which it corresponds to the...

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Veröffentlicht in:Technical physics 2022-02, Vol.67 (2), p.61-68
Hauptverfasser: Fomin, L. A., Malikov, I. V., Berezin, V. A., Rassadin, A. E., Loginov, A. B., Loginov, B. A.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic force microscopy
Classical and Continuum Physics
Dielectric films
Epitaxial growth
Epitaxy
Physics
Physics and Astronomy
Sapphire
Scanning tunneling microscopy
Thickness
Thin films
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Zusammenfassung:Scanning tunneling microscopy and atomic force microscopy were used to study the topography of epitaxial Mo films of small thicknesses grown on the R -plane of sapphire. The domain of parameters of the Kardar–Parisi–Zhang model for the evolution of film surface profile in which it corresponds to the experimental results is found.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784222010054