24.4% industrial tunnel oxide passivated contact solar cells with ozone-gas oxidation Nano SiOx and tube PECVD prepared in-situ doped polysilicon

Ozone-gas oxidation (OGO) technology, capable of integrating into tube plasma-enhanced chemical vapor deposition (PECVD) technology, is developed to prepare the Nano SiOx layer for tunnel oxide passivated contact (TOPCon) solar cells in this work. The effects of gas flow, oxidation temperature, and...

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Veröffentlicht in:	Solar energy materials and solar cells 2022-08, Vol.243, p.111803, Article 111803
Hauptverfasser:	Liu, Zunke, Lin, Na, Zhang, Qingshan, Yang, Bin, Xie, Lihua, Chen, Yan, Li, Wangpeng, Liao, Mingdun, Chen, Hui, Liu, Wei, Wang, Yuming, Huang, Shihua, Yan, Baojie, Zeng, Yuheng, Wan, Yimao, Ye, Jichun
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Gas flow Nitric acid Nitrous oxide Open circuit voltage Oxidation Ozone Ozone gas oxidation (OGO) Photoelectron spectroscopy Photoelectrons Photovoltaic cells Plasma enhanced chemical vapor deposition Polysilicon Solar cells Technology TOPCon Tube PECVD Tunnel oxide Tunnels X ray photoelectron spectroscopy
Online-Zugang:	Volltext
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