Si3N4 whisker/MPPO composite substrate with low dielectric loss and high thermal conductivity

Si 3 N 4 –MPPO copper clad substrates with different volume fraction of β-Si 3 N 4 whisker were prepared by hot pressing process. The effects of the loading fraction of β-Si 3 N 4 whisker fillers on the dielectric frequency and temperature response characteristics, thermal conductivity, thermal expa...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2022-07, Vol.33 (21), p.17190-17198
Hauptverfasser: Zeng, L. W., Xue, P. J., Bian, J. J.
Format: Artikel
Sprache:eng
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Zusammenfassung:Si 3 N 4 –MPPO copper clad substrates with different volume fraction of β-Si 3 N 4 whisker were prepared by hot pressing process. The effects of the loading fraction of β-Si 3 N 4 whisker fillers on the dielectric frequency and temperature response characteristics, thermal conductivity, thermal expansion coefficient, and mechanical strength were evaluated. It is found that the dielectric permittivity of the composite increases with the increase in fraction of Si 3 N 4 whisker as expected, which follows the modified Kerner model well. The composites with low loading fraction of filler (
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-022-08594-y