Schottky-like barrier characterization of field-effect transistors withmultiple quasi-ballistic channels

The potential barrier height at the interface formed by a metal contact and multipleone-dimensional (1D) quasi-ballistic channels in field-effect transistors is evaluatedacross different carbon nanotube and nanowire device technologies by means of aLandauer–Büttiker-based extraction methodology (LBM) adapted for multiple 1D-channels. Theextraction methodology yields values for an effective Schottky barrier height and a gatecoupling coefficient, an indicator of the device working at the quantum capacitance limit.The novel LBM-based approach embracing the mechanisms in 1D electronics is compared to theconventional activation energy method not considering such effects. The latter approachunderestimates the potential barrier height at metal–channel interfaces in comparison tothe novel methodology. A test structure based on a displaced gate device is proposed basedon numerical device simulation results toward an improved accuracy of the method.