P‐28: Development of Low‐Resistivity Gate‐Metal Process for LTPS‐TFT‐Array Backplane Applications

P‐28: Development of Low‐Resistivity Gate‐Metal Process for LTPS‐TFT‐Array Backplane Applications

We fabricated and characterized Low‐Temperature Polycrystalline‐Silicon Thin‐Film Transistors (LTPS TFTs) with low resistivity gate metal on a glass substrate, which can be applied to high refresh driving products. And the technology has been integrated to a gaming‐laptops liquid crystal display and...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2022-06, Vol.53 (1), p.1141-1144
Hauptverfasser: Ye, Jia-Hong, Huang, Ching-Liang, Huang, Kuo-Yu, Chen, Maw-Song, Guo, Wen-Rei, Huang, Wei-Ming, Wu, Yang-An
Format: Artikel
Sprache:eng
Schlagworte:
Backplanes
Electrical resistivity
Glass substrates
high frame rate driving
Liquid crystal displays
low resistivity metal
LTPS TFTs
Semiconductor devices
Thin film transistors
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container_end_page 1144
container_issue 1
container_start_page 1141
container_title SID International Symposium Digest of technical papers
container_volume 53
creator Ye, Jia-Hong
Huang, Ching-Liang
Huang, Kuo-Yu
Chen, Maw-Song
Guo, Wen-Rei
Huang, Wei-Ming
Wu, Yang-An
description We fabricated and characterized Low‐Temperature Polycrystalline‐Silicon Thin‐Film Transistors (LTPS TFTs) with low resistivity gate metal on a glass substrate, which can be applied to high refresh driving products. And the technology has been integrated to a gaming‐laptops liquid crystal display and demonstrated. This new LTPS TFTs backplane technology is promising integration for various displays, such as current driving like displays and LCD display.
doi_str_mv 10.1002/sdtp.15703
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2681379060</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2681379060</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1463-8e958ce7b1e51f0adda744f399b60415d355709d0b9183b045d9d36d8faf7a9d3</originalsourceid><addsrcrecordid>eNp9kE1OwzAQhS0EEqWw4QSW2CGl2HH-zK5QWpCCiGiQ2FlOYktp0zjYbqvsOAJn5CS4hDWbmdG8b2Y0D4BLjCYYIf_GVLab4DBG5AiMfBwlHsIhPQYjhGjs0Sh6PwVnxqwQIiQI6Aiss-_PLz-5hTOxE43qNqK1UEmYqr0TXoWpja13te3hglvhWs_C8gZmWpXCGCiVhmmeLZ2Qz3MXp1rzHt7xct01vBVw2nVNXXJbq9acgxPJGyMu_vIYvM0f8vtHL31ZPN1PU6_EQUS8RNAwKUVcYBFiiXhV8TgIJKG0iFCAw4qE7kFaoYLihBQoCCtakahKJJcxd-UYXA17O60-tsJYtlJb3bqTzI8STGKKIuSo64EqtTJGC8k6XW-47hlG7GAmO5jJfs10MB7gfd2I_h-SLWd5Nsz8ALQTe7M</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2681379060</pqid></control><display><type>article</type><title>P‐28: Development of Low‐Resistivity Gate‐Metal Process for LTPS‐TFT‐Array Backplane Applications</title><source>Wiley Online Library All Journals</source><creator>Ye, Jia-Hong ; Huang, Ching-Liang ; Huang, Kuo-Yu ; Chen, Maw-Song ; Guo, Wen-Rei ; Huang, Wei-Ming ; Wu, Yang-An</creator><creatorcontrib>Ye, Jia-Hong ; Huang, Ching-Liang ; Huang, Kuo-Yu ; Chen, Maw-Song ; Guo, Wen-Rei ; Huang, Wei-Ming ; Wu, Yang-An</creatorcontrib><description>We fabricated and characterized Low‐Temperature Polycrystalline‐Silicon Thin‐Film Transistors (LTPS TFTs) with low resistivity gate metal on a glass substrate, which can be applied to high refresh driving products. And the technology has been integrated to a gaming‐laptops liquid crystal display and demonstrated. This new LTPS TFTs backplane technology is promising integration for various displays, such as current driving like displays and LCD display.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.15703</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>Backplanes ; Electrical resistivity ; Glass substrates ; high frame rate driving ; Liquid crystal displays ; low resistivity metal ; LTPS TFTs ; Semiconductor devices ; Thin film transistors</subject><ispartof>SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.1141-1144</ispartof><rights>2022 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1463-8e958ce7b1e51f0adda744f399b60415d355709d0b9183b045d9d36d8faf7a9d3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsdtp.15703$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsdtp.15703$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Ye, Jia-Hong</creatorcontrib><creatorcontrib>Huang, Ching-Liang</creatorcontrib><creatorcontrib>Huang, Kuo-Yu</creatorcontrib><creatorcontrib>Chen, Maw-Song</creatorcontrib><creatorcontrib>Guo, Wen-Rei</creatorcontrib><creatorcontrib>Huang, Wei-Ming</creatorcontrib><creatorcontrib>Wu, Yang-An</creatorcontrib><title>P‐28: Development of Low‐Resistivity Gate‐Metal Process for LTPS‐TFT‐Array Backplane Applications</title><title>SID International Symposium Digest of technical papers</title><description>We fabricated and characterized Low‐Temperature Polycrystalline‐Silicon Thin‐Film Transistors (LTPS TFTs) with low resistivity gate metal on a glass substrate, which can be applied to high refresh driving products. And the technology has been integrated to a gaming‐laptops liquid crystal display and demonstrated. This new LTPS TFTs backplane technology is promising integration for various displays, such as current driving like displays and LCD display.</description><subject>Backplanes</subject><subject>Electrical resistivity</subject><subject>Glass substrates</subject><subject>high frame rate driving</subject><subject>Liquid crystal displays</subject><subject>low resistivity metal</subject><subject>LTPS TFTs</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQhS0EEqWw4QSW2CGl2HH-zK5QWpCCiGiQ2FlOYktp0zjYbqvsOAJn5CS4hDWbmdG8b2Y0D4BLjCYYIf_GVLab4DBG5AiMfBwlHsIhPQYjhGjs0Sh6PwVnxqwQIiQI6Aiss-_PLz-5hTOxE43qNqK1UEmYqr0TXoWpja13te3hglvhWs_C8gZmWpXCGCiVhmmeLZ2Qz3MXp1rzHt7xct01vBVw2nVNXXJbq9acgxPJGyMu_vIYvM0f8vtHL31ZPN1PU6_EQUS8RNAwKUVcYBFiiXhV8TgIJKG0iFCAw4qE7kFaoYLihBQoCCtakahKJJcxd-UYXA17O60-tsJYtlJb3bqTzI8STGKKIuSo64EqtTJGC8k6XW-47hlG7GAmO5jJfs10MB7gfd2I_h-SLWd5Nsz8ALQTe7M</recordid><startdate>202206</startdate><enddate>202206</enddate><creator>Ye, Jia-Hong</creator><creator>Huang, Ching-Liang</creator><creator>Huang, Kuo-Yu</creator><creator>Chen, Maw-Song</creator><creator>Guo, Wen-Rei</creator><creator>Huang, Wei-Ming</creator><creator>Wu, Yang-An</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>202206</creationdate><title>P‐28: Development of Low‐Resistivity Gate‐Metal Process for LTPS‐TFT‐Array Backplane Applications</title><author>Ye, Jia-Hong ; Huang, Ching-Liang ; Huang, Kuo-Yu ; Chen, Maw-Song ; Guo, Wen-Rei ; Huang, Wei-Ming ; Wu, Yang-An</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1463-8e958ce7b1e51f0adda744f399b60415d355709d0b9183b045d9d36d8faf7a9d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Backplanes</topic><topic>Electrical resistivity</topic><topic>Glass substrates</topic><topic>high frame rate driving</topic><topic>Liquid crystal displays</topic><topic>low resistivity metal</topic><topic>LTPS TFTs</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ye, Jia-Hong</creatorcontrib><creatorcontrib>Huang, Ching-Liang</creatorcontrib><creatorcontrib>Huang, Kuo-Yu</creatorcontrib><creatorcontrib>Chen, Maw-Song</creatorcontrib><creatorcontrib>Guo, Wen-Rei</creatorcontrib><creatorcontrib>Huang, Wei-Ming</creatorcontrib><creatorcontrib>Wu, Yang-An</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ye, Jia-Hong</au><au>Huang, Ching-Liang</au><au>Huang, Kuo-Yu</au><au>Chen, Maw-Song</au><au>Guo, Wen-Rei</au><au>Huang, Wei-Ming</au><au>Wu, Yang-An</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P‐28: Development of Low‐Resistivity Gate‐Metal Process for LTPS‐TFT‐Array Backplane Applications</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2022-06</date><risdate>2022</risdate><volume>53</volume><issue>1</issue><spage>1141</spage><epage>1144</epage><pages>1141-1144</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>We fabricated and characterized Low‐Temperature Polycrystalline‐Silicon Thin‐Film Transistors (LTPS TFTs) with low resistivity gate metal on a glass substrate, which can be applied to high refresh driving products. And the technology has been integrated to a gaming‐laptops liquid crystal display and demonstrated. This new LTPS TFTs backplane technology is promising integration for various displays, such as current driving like displays and LCD display.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.15703</doi><tpages>4</tpages></addata></record>
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subjects Backplanes
Electrical resistivity
Glass substrates
high frame rate driving
Liquid crystal displays
low resistivity metal
LTPS TFTs
Semiconductor devices
Thin film transistors
title P‐28: Development of Low‐Resistivity Gate‐Metal Process for LTPS‐TFT‐Array Backplane Applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T17%3A28%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=P%E2%80%9028:%20Development%20of%20Low%E2%80%90Resistivity%20Gate%E2%80%90Metal%20Process%20for%20LTPS%E2%80%90TFT%E2%80%90Array%20Backplane%20Applications&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Ye,%20Jia-Hong&rft.date=2022-06&rft.volume=53&rft.issue=1&rft.spage=1141&rft.epage=1144&rft.pages=1141-1144&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.15703&rft_dat=%3Cproquest_cross%3E2681379060%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2681379060&rft_id=info:pmid/&rfr_iscdi=true