67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display
A comparison between cyclic out‐folding and in‐folding strain on flexible poly‐Si TFTs for foldable AMOLED display is reported. TFT under out‐folding stress exhibits severe degradation including positive threshold voltage (VTh) shift with unstable drain current (ID) than in‐folding, which is related...
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2022-06, Vol.53 (1), p.893-896 |
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| container_title | SID International Symposium Digest of technical papers |
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| creator | Billah, Mohammad Masum Siddik, Abu Bakar Kim, Dongjin Lee, Suhui Cho, Young Jo Rabbi, Md Hasnat Jang, Jin |
| description | A comparison between cyclic out‐folding and in‐folding strain on flexible poly‐Si TFTs for foldable AMOLED display is reported. TFT under out‐folding stress exhibits severe degradation including positive threshold voltage (VTh) shift with unstable drain current (ID) than in‐folding, which is related to defect‐generation at poly‐Si grain‐boundary and justified using TCAD simulation. Stable low leakage current ( |
| doi_str_mv | 10.1002/sdtp.15637 |
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TFT under out‐folding stress exhibits severe degradation including positive threshold voltage (VTh) shift with unstable drain current (ID) than in‐folding, which is related to defect‐generation at poly‐Si grain‐boundary and justified using TCAD simulation. Stable low leakage current (<1 pA) after 30,000 mechanical folding cycles confirms the defect formation within poly‐Si and grain boundary protrusions. 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TFT under out‐folding stress exhibits severe degradation including positive threshold voltage (VTh) shift with unstable drain current (ID) than in‐folding, which is related to defect‐generation at poly‐Si grain‐boundary and justified using TCAD simulation. Stable low leakage current (<1 pA) after 30,000 mechanical folding cycles confirms the defect formation within poly‐Si and grain boundary protrusions. Electrical performance recovery using vacuum annealing after folding stress verifies the origin of electrical degradation as metastable traps generation.</description><subject>Active matrix displays</subject><subject>Degradation</subject><subject>density of states (DOS)</subject><subject>Folding</subject><subject>Grain boundaries</subject><subject>Leakage current</subject><subject>Low-temperature poly-Si (LTPS)</subject><subject>mechanical folding stress</subject><subject>Silicon substrates</subject><subject>TCAD</subject><subject>thin-film transistor (TFT)</subject><subject>Threshold voltage</subject><subject>Vacuum annealing</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEUhYMoWH82PkHAnTA1mXSSiTvpjwqVFlrB3RCTG4lMJ2MyRbrzEVz7eD6JqXXhytWFc79zLvcgdEZJnxKSX0bTtX1acCb2UC-nvMwILeQ-6hEiRSY5fzxERzG-EMLYYCB76JOLr_cPeoWHftWq4KJvsLf4rkmq9bVxzTNWjcGzdfdHWXQBYsSJHdegu-C0qvEcgvVhpRoN24i5rzfJsnB4OVn-sFvFrZwBvFg_xS6oDnBy4ElKVU814Ov72XQ8wiMX21ptTtCBVXWE0995jB4m4-XwNpvObu6G19NMU1KITICmWg8o4bJkRqbnAawopYG0NsRKBhqMMKzkyhQiN9Yyoopcq4IIrTk7Rue73Db41zXErnrx69Ckk1XOS8qEKCRN1MWO0sHHGMBWbXArFTYVJdW2-2rbffXTfYLpDn5zNWz-IavFaDnfeb4Bq1OLtQ</recordid><startdate>202206</startdate><enddate>202206</enddate><creator>Billah, Mohammad Masum</creator><creator>Siddik, Abu Bakar</creator><creator>Kim, Dongjin</creator><creator>Lee, Suhui</creator><creator>Cho, Young Jo</creator><creator>Rabbi, Md Hasnat</creator><creator>Jang, Jin</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>202206</creationdate><title>67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display</title><author>Billah, Mohammad Masum ; Siddik, Abu Bakar ; Kim, Dongjin ; Lee, Suhui ; Cho, Young Jo ; Rabbi, Md Hasnat ; Jang, Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1057-7ec1cc4106983d9156eef789de105d0f93eced7d386ad572dff30a52ca507cc63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Active matrix displays</topic><topic>Degradation</topic><topic>density of states (DOS)</topic><topic>Folding</topic><topic>Grain boundaries</topic><topic>Leakage current</topic><topic>Low-temperature poly-Si (LTPS)</topic><topic>mechanical folding stress</topic><topic>Silicon substrates</topic><topic>TCAD</topic><topic>thin-film transistor (TFT)</topic><topic>Threshold voltage</topic><topic>Vacuum annealing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Billah, Mohammad Masum</creatorcontrib><creatorcontrib>Siddik, Abu Bakar</creatorcontrib><creatorcontrib>Kim, Dongjin</creatorcontrib><creatorcontrib>Lee, Suhui</creatorcontrib><creatorcontrib>Cho, Young Jo</creatorcontrib><creatorcontrib>Rabbi, Md Hasnat</creatorcontrib><creatorcontrib>Jang, Jin</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Billah, Mohammad Masum</au><au>Siddik, Abu Bakar</au><au>Kim, Dongjin</au><au>Lee, Suhui</au><au>Cho, Young Jo</au><au>Rabbi, Md Hasnat</au><au>Jang, Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2022-06</date><risdate>2022</risdate><volume>53</volume><issue>1</issue><spage>893</spage><epage>896</epage><pages>893-896</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>A comparison between cyclic out‐folding and in‐folding strain on flexible poly‐Si TFTs for foldable AMOLED display is reported. 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| subjects | Active matrix displays Degradation density of states (DOS) Folding Grain boundaries Leakage current Low-temperature poly-Si (LTPS) mechanical folding stress Silicon substrates TCAD thin-film transistor (TFT) Threshold voltage Vacuum annealing |
| title | 67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display |
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