67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display

67‐1: Comparison of In‐folding and Out‐folding Stress on Electrical Performance of Poly‐Si TFTs on Polyimide Substrate for Foldable AMOLED Display

A comparison between cyclic out‐folding and in‐folding strain on flexible poly‐Si TFTs for foldable AMOLED display is reported. TFT under out‐folding stress exhibits severe degradation including positive threshold voltage (VTh) shift with unstable drain current (ID) than in‐folding, which is related...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2022-06, Vol.53 (1), p.893-896
Hauptverfasser: Billah, Mohammad Masum, Siddik, Abu Bakar, Kim, Dongjin, Lee, Suhui, Cho, Young Jo, Rabbi, Md Hasnat, Jang, Jin
Format: Artikel
Sprache:eng
Schlagworte:
Active matrix displays
Degradation
density of states (DOS)
Folding
Grain boundaries
Leakage current
Low-temperature poly-Si (LTPS)
mechanical folding stress
Silicon substrates
TCAD
thin-film transistor (TFT)
Threshold voltage
Vacuum annealing
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Zusammenfassung:A comparison between cyclic out‐folding and in‐folding strain on flexible poly‐Si TFTs for foldable AMOLED display is reported. TFT under out‐folding stress exhibits severe degradation including positive threshold voltage (VTh) shift with unstable drain current (ID) than in‐folding, which is related to defect‐generation at poly‐Si grain‐boundary and justified using TCAD simulation. Stable low leakage current (
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.15637