32‐4: Metal Oxide Thin‐Film Transistors with 0.1 μm channel length formed by Self‐Aligned Nanogap Patterning

We demonstrate the oxide semiconductor TFTs with submicron channel length realized by Self‐Aligned Nanogap Patterning (SANP) process which makes it enable to overcome the resolution limit of conventional photolithographic tool in the large area electronics. Using contact aligner with line and space resolution of 3 pm, the Al‐doped InZnSnO TFT with field‐effect mobility of 12 cm2/Vs, subthreshold swing of 100 mV/dec, Ion/IOff 1010, and turn‐on voltage of −0.88 V was successfully fabricated in the channel length of about 100 nm