Optimization of 22nm Bi-GFET device for threshold voltage using Taguchi method

Optimization of 22nm Bi-GFET device for threshold voltage using Taguchi method

The Taguchi approach was used in this work to improve the effect of source/drain (S/D) implant energy changes on threshold voltage (VTH) and leak current (IOFF) in 22nm n-type Metal Oxide Semiconductor Field Transistors (MOSFETs). Besides S/D implant energy, the other process parameters that used we...

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Hauptverfasser: Izwanizam, Y., Maheran, A. H. Afifah, Salehuddin, F., Kaharudin, K. E.
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Sprache:eng
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Design optimization
Metal oxide semiconductors
MOSFETs
N-type semiconductors
Parameter modification
Process parameters
Simulation
Simulators
Taguchi methods
Threshold voltage
Transistors
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creator Izwanizam, Y.
Maheran, A. H. Afifah
Salehuddin, F.
Kaharudin, K. E.
description The Taguchi approach was used in this work to improve the effect of source/drain (S/D) implant energy changes on threshold voltage (VTH) and leak current (IOFF) in 22nm n-type Metal Oxide Semiconductor Field Transistors (MOSFETs). Besides S/D implant energy, the other process parameters that used were VTH modify implant energy dose, S/D implant tilt, and VTH adjust implant tilt. This study was carried out using the TCAD simulator, which consists of a process simulator called ATHENE and a device simulator called ATLAS. Throughout this study, these two simulators were coupled with the L9 Taguchi technique to aid in the design and optimization of method parameters. S/D implant energy dosage (68%) and VTH modify implant energy dose are the most successful technique parameters in respect to VTH and IOFF (91%). The second-placed problem, which affects VTH is S/D implant tilt (14%) and VTH adjust implant tilt (15%) respectively. The results show that when optimizations approach is 0.174085V at IOFF = 35nA/μm.
doi_str_mv 10.1063/5.0079065
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Throughout this study, these two simulators were coupled with the L9 Taguchi technique to aid in the design and optimization of method parameters. S/D implant energy dosage (68%) and VTH modify implant energy dose are the most successful technique parameters in respect to VTH and IOFF (91%). The second-placed problem, which affects VTH is S/D implant tilt (14%) and VTH adjust implant tilt (15%) respectively. 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E.</creatorcontrib><title>Optimization of 22nm Bi-GFET device for threshold voltage using Taguchi method</title><title>AIP conference proceedings</title><description>The Taguchi approach was used in this work to improve the effect of source/drain (S/D) implant energy changes on threshold voltage (VTH) and leak current (IOFF) in 22nm n-type Metal Oxide Semiconductor Field Transistors (MOSFETs). Besides S/D implant energy, the other process parameters that used were VTH modify implant energy dose, S/D implant tilt, and VTH adjust implant tilt. This study was carried out using the TCAD simulator, which consists of a process simulator called ATHENE and a device simulator called ATLAS. Throughout this study, these two simulators were coupled with the L9 Taguchi technique to aid in the design and optimization of method parameters. S/D implant energy dosage (68%) and VTH modify implant energy dose are the most successful technique parameters in respect to VTH and IOFF (91%). 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E.</au><au>Ariffin, Wan Nor Munirah</au><au>Muhamad, Wan Zuki Azman Wan</au><au>Al-Saggoff, Syed Zulkarnain Syed Idrus</au><au>Amin, Nor Azrita Mohd</au><au>Ghazali, Najah</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Optimization of 22nm Bi-GFET device for threshold voltage using Taguchi method</atitle><btitle>AIP conference proceedings</btitle><date>2022-06-24</date><risdate>2022</risdate><volume>2465</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>The Taguchi approach was used in this work to improve the effect of source/drain (S/D) implant energy changes on threshold voltage (VTH) and leak current (IOFF) in 22nm n-type Metal Oxide Semiconductor Field Transistors (MOSFETs). Besides S/D implant energy, the other process parameters that used were VTH modify implant energy dose, S/D implant tilt, and VTH adjust implant tilt. 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subjects Design optimization
Metal oxide semiconductors
MOSFETs
N-type semiconductors
Parameter modification
Process parameters
Simulation
Simulators
Taguchi methods
Threshold voltage
Transistors
title Optimization of 22nm Bi-GFET device for threshold voltage using Taguchi method
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