Optimization of 22nm Bi-GFET device for threshold voltage using Taguchi method

The Taguchi approach was used in this work to improve the effect of source/drain (S/D) implant energy changes on threshold voltage (VTH) and leak current (IOFF) in 22nm n-type Metal Oxide Semiconductor Field Transistors (MOSFETs). Besides S/D implant energy, the other process parameters that used were VTH modify implant energy dose, S/D implant tilt, and VTH adjust implant tilt. This study was carried out using the TCAD simulator, which consists of a process simulator called ATHENE and a device simulator called ATLAS. Throughout this study, these two simulators were coupled with the L9 Taguchi technique to aid in the design and optimization of method parameters. S/D implant energy dosage (68%) and VTH modify implant energy dose are the most successful technique parameters in respect to VTH and IOFF (91%). The second-placed problem, which affects VTH is S/D implant tilt (14%) and VTH adjust implant tilt (15%) respectively. The results show that when optimizations approach is 0.174085V at IOFF = 35nA/μm.